PSMN004-55W,127 NXP Semiconductors, PSMN004-55W,127 Datasheet - Page 7

• Manufacturer Part Number: PSMN004-55W,127
• Description: MOSFET N-CH 55V 100A SOT429
• Manufacturer: NXP Semiconductors
• Series: TrenchMOS™r

Specifications of PSMN004-55W,127

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.2 mOhm @ 25A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 226nC @ 5V
• Input Capacitance (ciss) @ Vds: 13000pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934055815127; PSMN004-55W; PSMN004-55W

Philips Semiconductors
MECHANICAL DATA
Notes
1. Observe the general handling precautions for electrostatic-discharge sensitive devices (ESDs) to prevent
2. Refer to mounting instructions for SOT429 envelope.
3. Epoxy meets UL94 V0 at 1/8".
October 1999
N-channel logic level TrenchMOS
damage to MOS gate oxide.
Plastic single-ended through-hole package; heatsink mounted; 1 mounting hole; 3-lead TO-247
Note
1. Tinning of terminals are uncontrolled within zone L 1 .
DIMENSIONS (mm are the original dimensions)
UNIT
mm
OUTLINE
VERSION
SOT429
5.3
4.7
A
1.9
1.7
A 1
1.2
0.9
b
L 1
Fig.16. SOT429; pin 2 connected to mounting base
R
(1)
2.2
1.8
IEC
b 1
3.2
2.8
b 2
b 2
1
e
0.9
0.6
c
E
P
TO-247
2
JEDEC
b 1
b
21
20
e
D
REFERENCES
16
15
E
3
transistor
0
5.45
e
w
q
M
scale
EIAJ
S
16
15
7
10
L
Y
L 1
4.0
3.6
20 mm
(1)
D
L
3.7
3.3
P
2.6
2.4
Q
A 1
5.3
q
Q
3.5
3.3
R
PROJECTION
A
EUROPEAN
7.5
7.1
c
S
0.4
w
15.7
15.3
Y
ISSUE DATE
98-04-07
99-08-04
6
4
PSMN004-55W
SOT429
Product specification
17
13
Rev 1.100