IRF7201 International Rectifier, IRF7201 Datasheet - Page 2

• Manufacturer Part Number: IRF7201
• Description: MOSFET N-CH 30V 7.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7201

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 7.3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7.3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 28nC @ 10V
• Input Capacitance (ciss) @ Vds: 550pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7201

IRF7201
Electrical Characteristics @ T
Source-Drain Ratings and Characteristics

‚
Notes:
V
∆V
V
g
I
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
R
I
GSS
d(on)
r
d(off)
f
S
SM
rr
DSS
fs
(BR)DSS
GS(th)
SD
iss
oss
rss
g
gs
gd
rr
2
DS(on)
Repetitive rating; pulse width limited by
V
(BR)DSS
max. junction temperature. (See fig. 11)
R
DD
G
= 25Ω, I
= 15V, starting T
/∆T
J
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Static Drain-to-Source On-Resistance
Drain-to-Source Leakage Current
AS
= 4.6A. (See Figure 8)
J
= 25°C, L = 6.6mH
Parameter
Parameter

J
= 25°C (unless otherwise specified)
ƒ
„
…
I
Pulse width ≤ 300µs; duty cycle ≤ 2%
When mounted on 1 inch square copper board, t<10 sec
T
Min. Typ. Max. Units
SD
Min. Typ. Max. Units
––– 0.024 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
1.0
5.8
30
J
≤ 150°C
≤ 4.6A, di/dt ≤ 120A/µs, V
–––
––– 0.030
––– 0.050
–––
–––
–––
–––
––– -100
–––
550
260
100
–––
2.3
6.3
7.0
19
35
21
19
48
73
–––
–––
–––
100
–––
–––
–––
–––
–––
–––
–––
110
1.0
3.5
9.5
58
1.2
2.5
25
28
73
V/°C
nC
pF
nC
ns
V
Ω
V
S
V
V
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz, See Fig. 9
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = 100A/µs ƒ
D
D
J
J
GS
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
G
D
GS
DS
DD
= 4.6A
= 4.6A
= 25°C, I
= 25°C, I
= 6.2Ω
= 3.2Ω,
= V
= 15V, I
= 24V, V
= 24V, V
= 24V
= 25V
≤ V
= 0V, I
= 10V, I
= 4.5V, I
= -20V
= 20V
= 10V, See Fig. 10
= 15V
= 0V
GS
(BR)DSS
Conditions
, I
D
S
F
D
D
D
Conditions
D
= 250µA
GS
GS
= 4.6A, V
= 4.6A
„
= 250µA
= 7.3A
= 2.3A
,
= 3.7A
= 0V
= 0V, T
D
www.irf.com
= 1mA
GS
„
J
„
= 125°C
„
= 0V
G
ƒ
S
D