IRF7201 International Rectifier, IRF7201 Datasheet - Page 5

• Manufacturer Part Number: IRF7201
• Description: MOSFET N-CH 30V 7.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7201

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 7.3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7.3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 28nC @ 10V
• Input Capacitance (ciss) @ Vds: 550pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7201

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100
0.1
1000
10
0.00001
1
800
600
400
200
0
D = 0.50
1
Fig 9. Typical Capacitance Vs.
0.20
0.10
0.05
0.02
0.01
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Drain-to-Source Voltage
V
DS
(THERMAL RESPONSE)
V
C
C
C
0.0001
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
SINGLE PULSE
= 0V,
= C
= C
= C
C
C
C
rss
iss
oss
gs
gd
ds
+ C
+ C
10
gd
gd
f = 1MHz
0.001
, C
ds
t , Rectangular Pulse Duration (sec)
SHORTED
1
0.01
100
A
20
16
12
0.1
8
4
0
0
I
D
Fig 10. Typical Gate Charge Vs.
= 4.6A
1. Duty factor D = t / t
2. Peak T = P
5
Notes:
Gate-to-Source Voltage
Q , Total Gate Charge (nC)
G
1
10
J
DM
x Z
V
V
15
1
DS
DS
thJA
IRF7201
P
2
= 24V
= 15V
DM
+ T
10
20
A
t
1
t
2
25
100
5
30
A