IRF7201 International Rectifier, IRF7201 Datasheet - Page 4

• Manufacturer Part Number: IRF7201
• Description: MOSFET N-CH 30V 7.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7201

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 7.3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7.3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 28nC @ 10V
• Input Capacitance (ciss) @ Vds: 550pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7201

IRF7201
4
Fig 7. On-Resistance Vs. Gate Voltage
0.05
0.04
0.03
0.02
2.0
1.5
1.0
0.5
0.0
Fig 5. Normalized On-Resistance
-60
2
I
D
-40
= 4.6A
V
T , Junction Temperature (°C)
4
GS
-20
J
Vs. Temperature
, Gate-to-Source Voltage (V)
0
6
20
I
D
8
40
= 7.3A
60
10
80
12
100 120 140 160
V
GS
14
= 10V
16
A
A
Fig 6. On-Resistance Vs. Drain Current
200
160
120
0.20
0.15
0.10
0.05
0.00
80
40
0
25
0
Fig 8. Maximum Avalanche Energy
Starting T , Junction Temperature (°C)
50
10
Vs. Drain Current
I , Drain Current (A)
J
D
V
75
GS
= 4.5V
20
100
www.irf.com
TOP
BOTTOM
V
GS
30
125
= 10V
3.7A
2.1A
4.6A
I
D
150
40
A
A