IRF7201 International Rectifier, IRF7201 Datasheet - Page 3

• Manufacturer Part Number: IRF7201
• Description: MOSFET N-CH 30V 7.3A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7201

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 30 mOhm @ 7.3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 7.3A
• Vgs(th) (max) @ Id: 1V @ 250µA
• Gate Charge (qg) @ Vgs: 28nC @ 10V
• Input Capacitance (ciss) @ Vds: 550pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF7201

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100
100
10
Fig 3. Typical Transfer Characteristics
10
Fig 1. Typical Output Characteristics
1
1
3.0
0.1
TOP
BOTTOM 3.0V
V
V
GS
3.5
DS
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
, Gate-to-Source Voltage (V)
, Drain-to-Source Voltage (V)
4.0
T = 25°C
J
3.0V
1
V
20µs PULSE WIDTH
20µs PULSE WIDTH
T = 25°C
T = 150°C
4.5
DS
J
J
= 10V
5.0
5.5
10
A
A
100
Fig 2. Typical Output Characteristics
10
100
0.1
1
10
0.1
1
0.4
TOP
BOTTOM 3.0V
Fig 4. Typical Source-Drain Diode
T = 150°C
V
J
V
DS
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
SD
, Drain-to-Source Voltage (V)
0.6
, Source-to-Drain Voltage (V)
Forward Voltage
1
0.8
T = 25°C
20µs PULSE WIDTH
T = 150°C
J
IRF7201
J
3.0V
1.0
V
GS
= 0V
10
3
1.2
A
A