IRF9520NS International Rectifier, IRF9520NS Datasheet - Page 2

• Manufacturer Part Number: IRF9520NS
• Description: MOSFET P-CH 100V 6.8A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF9520NS

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 480 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 6.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 10V
• Input Capacitance (ciss) @ Vds: 350pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF9520NS

Electrical Characteristics @ T
IRF9520NS/L
** When mounted on 1" square PCB (FR-4 or G-10 Material ).
Source-Drain Ratings and Characteristics
I
I
L
Notes:
V
R
V
g
Q
Q
Q
t
t
t
t
C
C
C
I
I
V
t
Q
t
DSS
GSS
d(on)
r
d(off)
f
SM
on
S
rr
S
V
fs
For recommended footprint and soldering techniques refer to application note #AN-994.
(BR)DSS
GS(th)
DS(on)
g
gd
iss
oss
rss
gs
SD
rr
Repetitive rating; pulse width limited by
(BR)DSS
max. junction temperature. ( See fig. 11 )
R
Starting T
I
T
SD
G
J
= 25 , I
175°C
/ T
-4.0A, di/dt
J
J
Drain-to-Source Leakage Current
Internal Source Inductance
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery
Forward Turn-On Time
= 25°C, L = 18mH
AS
= -4.0A. (See Figure 12)
-300A/µs, V
Parameter
Parameter
DD
Charge
V
(BR)DSS
J
= 25°C (unless otherwise specified)
,
Uses IRF9520N data and test conditions
-100
–––
–––
-2.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Pulse width
–––
Min. Typ. Max. Units
1.4
Min. Typ. Max. Units
___
–––
–––
–––
–––
Intrinsic turn-on time is negligible (turn-on is dominated by L
-0.10 –––
–––
––– 0.48
–––
–––
––– -250
–––
–––
–––
–––
350
110
420
–––
––– -100
–––
–––
–––
100
14
47
28
31
7.5
70
–––
-4.0
–––
–––
–––
–––
–––
–––
–––
–––
–––
-1.6
100
150
-25
5.0
-6.8
630
27
-27
15
300µs; duty cycle
V/°C
nC
nH
µA
nA
ns
pF
ns
nC
V
V
S
V
A
V
Reference to 25°C, I
V
V
V
V
V
V
I
V
V
I
R
R
Between lead,
and center of die contact
V
V
ƒ = 1.0MHz, See Fig. 5
V
V
MOSFET symbol
showing the
integral reverse
p-n junction diode.
T
T
di/dt = -100A/µs
D
D
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
J
J
G
D
= -4.0A
= -4.0A
= 25°C, I
= 25°C, I
= 22
= 12
= V
= -100V, V
= -80V, V
= 0V, I
= 10V, I
= -50V, I
= 20V
= -20V
= -80V
= -10V, See Fig. 6 and 13
= 0V
= -25V
= -50V
2%
GS
, I
See Fig. 10
D
F
S
D
D
Conditions
= -250µA
= -4.0A
Conditions
D
= -4.0A, V
GS
= -250µA
= -4.0A
GS
= -4.0A
= 0V, T
= 0V
D
= -1mA
GS
G
J
= 150°C
= 0V
S
+L
D
S
D
)