IRF9520NS International Rectifier, IRF9520NS Datasheet - Page 5

• Manufacturer Part Number: IRF9520NS
• Description: MOSFET P-CH 100V 6.8A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF9520NS

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 480 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 6.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 10V
• Input Capacitance (ciss) @ Vds: 350pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF9520NS

0.01
8.0
6.0
4.0
2.0
0.0
0.1
10
0.00001
1
25
Fig 9. Maximum Drain Current Vs.
D = 0.50
0.20
0.10
0.05
0.02
0.01
50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
T , Case Temperature ( C)
C
Case Temperature
75
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
100
125
°
t , Rectangular Pulse Duration (sec)
1
150
0.001
175
Fig 10a. Switching Time Test Circuit
Fig 10b. Switching Time Waveforms
V
10%
90%
V
GS
DS
0.01
R
Pulse Width
Duty Factor
G
-10V
t
1. Duty factor D = t / t
2. Peak T = P
V
d(on)
Notes:
GS
V
IRF9520NS/L
DS
t
r
J
µs
DM
x Z
1
0.1
D.U.T.
thJC
P
2
DM
R
t
+ T
D
d(off)
C
t
1
t
f
t
2
+
-
V
DD
1