IRF9520NS International Rectifier, IRF9520NS Datasheet - Page 4

• Manufacturer Part Number: IRF9520NS
• Description: MOSFET P-CH 100V 6.8A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF9520NS

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 480 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 6.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 10V
• Input Capacitance (ciss) @ Vds: 350pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF9520NS

IRF9520NS/L
800
600
400
200
100
0.1
10
0
1
0.2
1
Fig 5. Typical Capacitance Vs.
Fig 7. Typical Source-Drain Diode
C iss
C oss
C rss
-V
-V
Drain-to-Source Voltage
DS
SD
0.8
V
C
C
C
, Drain-to-Source Voltage (V)
,Source-to-Drain Voltage (V)
GS
iss
rss
oss
T = 175 C
Forward Voltage
J
=
=
=
=
0V,
C
C
C
gs
gd
ds
°
1.4
+ C
+ C
T = 25 C
10
J
f = 1MHz
gd ,
gd
°
C
ds
2.0
V
SHORTED
GS
= 0 V
2.6
100
100
0.1
20
16
12
10
8
4
0
1
0
1
I =
D
T
T
Single Pulse
Fig 6. Typical Gate Charge Vs.
Fig 8. Maximum Safe Operating Area
C
J
= 25 C
= 175 C
-4.0 A
OPERATION IN THIS AREA LIMITED
-V
Gate-to-Source Voltage
DS
Q , Total Gate Charge (nC)
°
5
°
G
, Drain-to-Source Voltage (V)
10
10
BY R
V
V
V
DS(on)
DS
DS
DS
FOR TEST CIRCUIT
15
=-80V
=-50V
=-20V
SEE FIGURE
100
10us
100us
1ms
10ms
20
13
1000
25