IRF9520NS International Rectifier, IRF9520NS Datasheet - Page 6

• Manufacturer Part Number: IRF9520NS
• Description: MOSFET P-CH 100V 6.8A D2PAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF9520NS

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 480 mOhm @ 4A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 6.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 10V
• Input Capacitance (ciss) @ Vds: 350pF @ 25V
• Power - Max: 3.8W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF9520NS

IRF9520NS/L
Fig 12a. Unclamped Inductive Test Circuit
Fig 12b. Unclamped Inductive Waveforms
-10V
Fig 13a. Basic Gate Charge Waveform
I
V
A S
G
R
-2 0 V
G
V D S
Q
GS
t p
I A S
D .U .T
0 .0 1
L
t p
Q
Charge
Q
GD
G
D R IV E R
V
(BR)DSS
15V
V D D
A
Fig 12c. Maximum Avalanche Energy
400
300
200
100
Fig 13b. Gate Charge Test Circuit
0
25
12V
Starting T , Junction Temperature ( C)
V
GS
Same Type as D.U.T.
50
Vs. Drain Current
Current Regulator
.2 F
J
75
50K
-3mA
Current Sampling Resistors
.3 F
I
100
G
D.U.T.
125
TOP
BOTTOM
I
D
+
-
150
V
DS
-1.7A
-2.8A
-4.0A
°
I D
175