IRLR8503 International Rectifier, IRLR8503 Datasheet

MOSFET N-CH 30V 44A DPAK

IRLR8503

Manufacturer Part Number
IRLR8503
Description
MOSFET N-CH 30V 44A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRLR8503

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
16 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
44A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 5V
Input Capacitance (ciss) @ Vds
1650pF @ 25V
Power - Max
62W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRLR8503

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IRLR8503
Manufacturer:
IR
Quantity:
246
Part Number:
IRLR8503
Manufacturer:
INTERNATIONAL RECTIFIER
Quantity:
30 000
Part Number:
IRLR8503PBF
Manufacturer:
INTERNATIONAL RECTIFIER
Quantity:
30 000
Part Number:
IRLR8503TR
Manufacturer:
IR
Quantity:
5 510
Part Number:
IRLR8503TRLPBF
Manufacturer:
INTERNATIONAL RECTIFIER
Quantity:
30 000
www.irf.com
Absolute Maximum Ratings
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain or Source Current
Pulsed Drain Current
Power Dissipation
Junction & Storage Temperature Range
Continuous Source Current (Body Diode)
Pulsed Source Current
Thermal Resistance
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
• N-Channel Application-Specific MOSFET
• Ideal for CPU Core DC-DC Converters
• Low Conduction Losses
• Minimizes Parallel MOSFETs for high current
• 100% R
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve very low on-resistance.
The reduced conduction losses makes it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
The IRLR8503 has been optimized and is 100% tested for
all parameters that are critical in synchronous buck
converters including R
induced turn-on immunity. The IRLR8503 offers an
extremely low combination of Q
losses in control FET applications.
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 2W is possible in a typical PCB
mount application.
applications
G
Tested
gÃÃÃÃÃÃÃÃÃÃÃ
Parameter
Parameter
DS(on)
h
, gate charge and Cdv/dt-
eÃh
sw
& R
DS(on)
T
T
T
T
for reduced
C
C
C
C
= 25°C
= 90°C
= 25°C
= 90°C
HEXFET
Symbol
T
Symbol
J
R
R
V
V
I
, T
P
I
DM
I
I
SM
θJA
θJL
DS
GS
D
S
D
G
®
STG
DEVICE RATINGS (MAX. Values)
MOSFET for DC-DC Converters
R
Q
Q
V
DS(on)
Q
OSS
SW
Typ
DS
–––
–––
G
IRLR8503
D
S
-55 to 150
±20
196
196
30
44
32
62
30
15
IRLR8503
29.5 nC
IRLR8503
IRLR8503
18 mΩ
20 nC
8 nC
30V
Max
2.0
50
PD-93839C
Units
Units
°C/W
°C
W
V
A
A
5/26/05
1

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IRLR8503 Summary of contents

Page 1

... MOSFET technology to achieve very low on-resistance. The reduced conduction losses makes it ideal for high efficiency DC-DC converters that power the latest generation of microprocessors. The IRLR8503 has been optimized and is 100% tested for all parameters that are critical in synchronous buck converters including R , gate charge and Cdv/dt- DS(on) induced turn-on immunity ...

Page 2

... IRLR8503 Electrical Characteristics Parameter Drain-to-Source Breadown Voltage* Static Drain-Source On-Resistance* Gate Threshold Voltage* Drain-Source Leakage Current Gate-Source Leakage Current* Total Gate Charge, Control FET* Total Gate Charge, Synch FET* Pre-Vth Gate-to-Source Charge Post-Vth Gate-to-Source Charge Gate-to-Drain Charge Switch Charge gs2 gd Output Charge* ...

Page 3

... Power MOSFET Optimization for DC-DC Converters While the IRLR8103V and IRLR8503 can and are be- ing used in a variety of applications, they were designed and optimized for low voltage DC-DC conversion in a synchronous buck converter topology, specifically, mi- croprocessor power applications. The IRLR8503 (Fig- ...

Page 4

... FET (Q2) with low cobmined Qsw and R , but can also be used as a synchronous FET. The DS(on) IRLR8503 is also tested for Cdv/dt immunity, critical for the low side socket. The typical configuration in which these devices may be used in shown in Figure 7. 4 Table 3 – ...

Page 5

... 15A 500 9.0 10.0 11.0 12.0 Figure 11. Typical Capacitance vs. Drain-to-Source Voltage 1000.0 100 150°C 10 25° 15V 20µs PULSE WIDTH 1.0 2.5 3.0 3.5 4.0 4 Gate-to-Source Voltage (V) Figure 12. Typical Transfer Characteristics IRLR8503 15A 20V Total Gate Charge (nC) Charge 1MHz ...

Page 6

... IRLR8503 0.50 1 0.20 0.10 0.05 0.1 0.02 SINGLE PULSE 0.01 (THERMAL RESPONSE) 0.01 0.00001 0.0001 Figure 13. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient Inductive Load Circuit Figure 14. Clamped Inductive Load test diagram 6 Notes: 1. Duty factor Peak 0.001 0. Rectangular Pulse Duration (sec) 1 Figure 15. Switching waveform ...

Page 7

... INT ERNAT IONAL RECT IFIER IRFR120 LOGO EMBLY LOT CODE INT ERNAT IONAL RECT IFIER IRFR120 LOGO EMBLY LOT CODE IRLR8503 1.14 (.045) 0.89 (.035) 0.58 (.023) 0.46 (.018) 6.45 (.245) 5.68 (.224) LEAD ASSIGNMENTS 1 - GATE 0.51 (.020 DRAIN MIN SOURCE 4 - DRAIN ...

Page 8

... IRLR8503 Tape & Reel Information TO-252AA TR 12.1 ( .476 ) 11.9 ( .469 ) NOTES : 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ). 3. OUTLINE CONFORMS TO EIA-481 & EIA-541. 13 INCH NOTES : 1. OUTLINE CONFORMS TO EIA-481. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105 8 16 ...

Page 9

Note: For the most current drawings please refer to the IR website at: http://www.irf.com/package/ ...

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