IRLR8503 International Rectifier, IRLR8503 Datasheet - Page 6

MOSFET N-CH 30V 44A DPAK

IRLR8503

Manufacturer Part Number
IRLR8503
Description
MOSFET N-CH 30V 44A DPAK
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRLR8503

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
16 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
44A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
20nC @ 5V
Input Capacitance (ciss) @ Vds
1650pF @ 25V
Power - Max
62W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
*IRLR8503

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IRLR8503
Inductive Load Circuit
6
Figure 14. Clamped Inductive Load test diagram
0.01
0.1
10
0.00001
1
D = 0.50
Figure 13. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
0.20
0.10
0.05
0.02
0.01
(THERMAL RESPONSE)
0.0001
SINGLE PULSE
t , Rectangular Pulse Duration (sec)
1
0.001
0.01
1. Duty factor D = t / t
2. Peak T = P
Notes:
J
DM
Figure 15. Switching waveform
x Z
1
0.1
thJC
P
2
DM
+ T
C
t
1
t
2
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