IRLR8503 International Rectifier, IRLR8503 Datasheet - Page 2

• Manufacturer Part Number: IRLR8503
• Description: MOSFET N-CH 30V 44A DPAK
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRLR8503

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 16 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 44A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 20nC @ 5V
• Input Capacitance (ciss) @ Vds: 1650pF @ 25V
• Power - Max: 62W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRLR8503

IRLR8503
Notes:
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2
Electrical Characteristics
Drain-to-Source Breadown Voltage*
Static Drain-Source On-Resistance*
Gate Threshold Voltage*
Drain-Source Leakage Current
Gate-Source Leakage Current*
Total Gate Charge, Control FET*
Total Gate Charge, Synch FET*
Pre-Vth Gate-to-Source Charge
Post-Vth Gate-to-Source Charge
Gate-to-Drain Charge
Switch Charge* (Q
Output Charge*
Gate Resistance
Turn-On Delay Time
Drain Voltage Rise Time
Turn-Off Delay Time
Drain Voltage Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Source-Drain Rating & Characteristics
Diode Forward Voltage*
Reverse Recovery Charge
Reverse Recovery Charge
(with Parallel Schottsky)
*Devices are 100% tested to these parameters.
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width ≤ 300 µs; duty cycle ≤ 2%.
When mounted on 1 inch square copper board, t < 10 sec.
Typ = measured - Q
Parameter
Parameter
gs2
oss
+ Q
gd
)
Symbol Min Typ Max Units
V
R
V
I
I
Q
Q
Q
Q
Q
Q
Q
R
t
tr
t
tf
C
C
C
Symbol Min Typ Max Units
V
Q
Q
DSS
GSS
d(on)
d(off)
V
(BR)DSS
GS(th)
V
SD
DS(on)
G
iss
oss
rss
g
g
gs1
gs2
gd
SW
OSS
rr
rr(s)
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
––– 1650 –––
–––
–––
–––
–––
–––
1.0
0.4
30
–––
–––
–––
–––
––– ±100
–––
650
–––
… Calculated continuous current based on maximum allowable
†
3.7
1.3
4.1
5.4
11
13
15
13
23
10
18
11
58
76
67
3
decrease RMS current capability; package limitation
Junction temperature; switching and other losses will
current = 20A.
θ
29.5
–––
150
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
3.0
1.0
1.1
1.0
16
18
20
17
8
mΩ
µA
nA
nC
nC
ns
pF
V
V
Ω
V
V
V
V
V
V
V
V
V
V
V
V
V
Clamped Inductive Load
See Test Diagram Fig. 14
V
V
I
di/dt = 700A/µs
V
di/dt = 700A/µs
(with 10BQ040)
V
V
S
GS
GS
GS
DS
DS
DS
GS
GS
DS
DS
DD
GS
DS
GS
DD
DD
GS
= 15A
J
= 0V, I
= 10V, I
= 4.5V, 1
= V
= 30V, V
= 24V, V
= ± 20V
= 5V, I
= 16V, I
= 16V, V
= 16V, I
= 5.0V
= 25V
= 0
= 16V, V
= 16V, V
= 5V, V
GS
d
, I
, V
Conditions
Conditions
D
D
D
D
D
D
DS
= 250µA
= 15A, V
GS
GS
GS
GS
GS
GS
D
= 250µA
= 15A
= 15A
= 15A
= 15A
< 100mV
= 0
= 0, T
= 0
= 0V
= 0V, I
= 0V, I
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DS
J
S
S
= 100°C
= 16V
= 15A
= 15A