IRFL024NTR International Rectifier, IRFL024NTR Datasheet - Page 2

• Manufacturer Part Number: IRFL024NTR
• Description: MOSFET N-CH 55V 2.8A SOT223
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFL024NTR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 75 mOhm @ 2.8A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 2.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 18.3nC @ 10V
• Input Capacitance (ciss) @ Vds: 400pF @ 25V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

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IRFL024N
Source-Drain Ratings and Characteristics
Electrical Characteristics @ T
Notes:
I
I
V
t
Q
t
I
I
V
R
V
g
Q
Q
Q
t
t
t
t
C
C
C
S
SM
on
DSS
GSS
rr
d(on)
d(off)
r
f
V
fs
SD
(BR)DSS
GS(th)
rr
DS(on)
iss
oss
rss
Repetitive rating; pulse width limited by
g
gs
gd
Starting T
2
max. junction temperature. ( See fig. 11 )
R
(BR)DSS
G
= 25 , I
/ T
J
J
= 25°C, L = 54.7 mH
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode) 
Diode Forward Voltage
Reverse Recovery Time
Reverse RecoveryCharge
Forward Turn-On Time
Drain-to-Source Leakage Current
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
AS
= 2.8A. (See Figure 12)
Parameter
Parameter
J
= 25°C (unless otherwise specified)
ƒ
„
Pulse width
I
T
SD
––– 0.056 –––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Min. Typ. Max. Units
–––
–––
Min. Typ. Max. Units
2.0
3.0
–––
–––
–––
–––
55
J
Intrinsic turn-on time is negligible (turn-on is dominated by L
150°C
1.68A, di/dt
–––
13.4 –––
22.2 –––
17.7 –––
–––
–––
–––
–––
–––
–––
–––
–––
––– -100
––– 18.3
–––
–––
145
––– 0.075
400
8.1
35
50
60
300µs; duty cycle
–––
–––
250
100
–––
–––
–––
–––
11.2
1.0
2.8
4.0
3.0
7.7
53
75
25
155A/µs, V
V/°C
nC
µA
nA
nC
ns
ns
pF
V
V
V
S
A
MOSFET symbol
showing the
p-n junction diode.
integral reverse
T
T
di/dt = 100A/µs „
Reference to 25°C, I
V
V
V
V
V
V
V
V
I
V
V
V
I
R
R
V
V
ƒ = 1.0MHz, See Fig. 5
D
D
J
J
GS
GS
DS
DS
DS
DS
GS
GS
DS
GS
DD
GS
DS
G
D
DD
= 1.68A
= 1.68A
= 25°C, I
= 25°C, I
= 17 , See Fig. 10 „
= 24
= V
= 25V, I
= 55V, V
= 44V, V
= 44V
= 25V
= 0V, I
= 10V, I
= 20V
= -20V
= 10V, See Fig. 6 and 9 „
= 28V
= 0V
2%.
V
GS
(BR)DSS
, I
D
S
F
D
D
D
Conditions
= 250µA
= 1.68A
GS
GS
=1.68A, V
Conditions
= 250µA
= 1.68A
= 2.8A „
,
= 0V
= 0V, T
D
www.irf.com
= 1mA
GS
J
= 125°C
= 0V „
S
+L
D
)