IRFL024NTR International Rectifier, IRFL024NTR Datasheet - Page 5

• Manufacturer Part Number: IRFL024NTR
• Description: MOSFET N-CH 55V 2.8A SOT223
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFL024NTR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 75 mOhm @ 2.8A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 2.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 18.3nC @ 10V
• Input Capacitance (ciss) @ Vds: 400pF @ 25V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

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1000
100
Fig 9a. Basic Gate Charge Waveform
Fig 9b. Gate Charge Test Circuit
0.1
10V
10
12V
0.0001
1
V
V
GS
G
D = 0.50
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
Same Type as D.U.T.
0.20
0.10
0.05
0.02
0.01
Current Regulator
.2 F
Q
GS
50K
3mA
(THERMAL RESPONSE)
Current Sampling Resistors
0.001
.3 F
SINGLE PULSE
Q
Charge
I
Q
G
GD
G
D.U.T.
I
D
0.01
+
-
V
t , Rectangular Pulse Duration (sec)
DS
1
0.1
Fig 10a. Switching Time Test Circuit
1
Fig 10b. Switching Time Waveforms
V
90%
10%
V
DS
GS
R
Pulse Width
Duty Factor
1. Duty factor D = t / t
2. Peak T = P
G
Notes:
10V
V
t
d(on)
GS
10
V
J
DS
t
r
DM
µs
x Z
1
thJC
P
2
DM
D.U.T.
IRFL024N
+ T
100
C
t
R
1
D
t
t
d(off)
2
t
f
1000
+
-
V
DD
5