IRFL024NTR International Rectifier, IRFL024NTR Datasheet - Page 6

• Manufacturer Part Number: IRFL024NTR
• Description: MOSFET N-CH 55V 2.8A SOT223
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFL024NTR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 75 mOhm @ 2.8A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 2.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 18.3nC @ 10V
• Input Capacitance (ciss) @ Vds: 400pF @ 25V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRFL024N
Fig 12b. Unclamped Inductive Waveforms
6
Fig 12a. Unclamped Inductive Test Circuit
I
A S
R G
1 0 V
V D S
t p
I A S
D .U .T
t p
0.0 1
L
V
1 5V
(B R )D SS
D R IV E R
+
-
V D D
A
500
400
300
200
100
Fig 12c. Maximum Avalanche Energy
0
25
Starting T , Junction Temperature ( C)
50
Vs. Drain Current
J
75
100
TOP
BOTTOM
www.irf.com
125
°
1.3A
2.2A
2.8A
I D
150