IRFL024NTR International Rectifier, IRFL024NTR Datasheet - Page 4

• Manufacturer Part Number: IRFL024NTR
• Description: MOSFET N-CH 55V 2.8A SOT223
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRFL024NTR

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 75 mOhm @ 2.8A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 2.8A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 18.3nC @ 10V
• Input Capacitance (ciss) @ Vds: 400pF @ 25V
• Power - Max: 1W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

IRFL024N
100
4
0.1
10
1
700
600
500
400
300
200
100
0.2
Fig 7. Typical Source-Drain Diode
0
1
Fig 5. Typical Capacitance Vs.
T = 150 C
J
V
Drain-to-Source Voltage
C
SD
C
C
0.4
V
oss
iss
rss
Forward Voltage
DS
,Source-to-Drain Voltage (V)
°
V
C
C
C
, Drain-to-Source Voltage (V)
GS
iss
rss
oss
0.6
=
=
=
=
0V,
C
C
C
gs
gd
ds
+ C
+ C
10
0.8
f = 1MHz
gd ,
gd
T = 25 C
J
C
ds
°
V
1.0
GS
SHORTED
= 0 V
1.2
100
Fig 8. Maximum Safe Operating Area
100
0.1
20
15
10
10
5
0
1
0.1
0
Fig 6. Typical Gate Charge Vs.
I =
D
T
T
Single Pulse
C
J
= 25 C
= 150 C
1.68 A
Gate-to-Source Voltage
OPERATION IN THIS AREA LIMITED
V
DS
Q , Total Gate Charge (nC)
°
°
G
5
, Drain-to-Source Voltage (V)
1
BY R
10
10
DS(on)
V
V
DS
DS
FOR TEST CIRCUIT
SEE FIGURE
= 44V
= 27V
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100us
1ms
10ms
100
15
13
1000
20