IRF450 International Rectifier, IRF450 Datasheet - Page 2

• Manufacturer Part Number: IRF450
• Description: MOSFET N-CH 500V 12A TO-3-3
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF450

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 500 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 120nC @ 10V
• Input Capacitance (ciss) @ Vds: 2700pF @ 25V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: TO-204, TO-3
• Current, Drain: 12 A
• Gate Charge, Total: 55 nC
• Package Type: TO-3
• Polarization: N-Channel
• Power Dissipation: 150 W
• Resistance, Drain To Source On: 0.4 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 170 ns
• Time, Turn-on Delay: 35 ns
• Transconductance, Forward: 5.5 S
• Voltage, Breakdown, Drain To Source: 500 V
• Voltage, Forward, Diode: 1.7 V
• Voltage, Gate To Source: ±20 V
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF450; Q2009037

Thermal Resistance
Electrical Characteristics
Source-Drain Diode Ratings and Characteristics
For footnotes refer to the last page
IRF450
R thJC
R thJA
BV DSS
R DS(on)
V GS(th)
g fs
I DSS
I GSS
I GSS
Q g
Q gs
Q gd
t d
t r
t d
L S + L D
C iss
C oss
C rss
t f
I S
I SM
V SD
t rr
Q RR
t o n
BV DSS / T J
(off)
(on)
2
Parameter
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Parameter
Junction to Case
Junction to Ambient
Parameter
Drain-to-Source Breakdown Voltage
Temperature Coefficient of Breakdown
Voltage
Static Drain-to-Source On-State
Resistance
Gate Threshold Voltage
Forward Transconductance
Zero Gate Voltage Drain Current
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
@ Tj = 25°C (Unless Otherwise Specified)
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by L S + L D .
Min Typ Max Units
—
—
Min Typ Max Units
—
—
—
—
—
Min
500
2.0
5.5
5.0
—
—
—
—
—
—
—
5 5
2 7
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
2700
0.83
0.78
Typ Max Units
600
240
6.1
30
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
1600
1.7
1 2
4 8
1 4
0.500
0.400
-100
°C/W
4.0
250
100
120
190
170
130
—
—
—
2 5
1 9
7 0
3 5
—
—
—
nS
µC
V
A
S ( )
V/°C
nH
V
nA
n s
nC
pF
V
A
Typical socket mount
T j = 25°C, I F =12A, di/dt
T
j
= 25°C, I S =12A, V GS = 0V
Measured from drain lead (6mm/0.25in. from
package) to source lead (6mm/0.25in. from
package)
Reference to 25°C, I D = 1.0mA
V DS > 15V, I DS = 7.75A
V DS = V GS , I D =250µA
V GS = 10V, I D =12A
Test Conditions
Test Conditions
V GS = 10V, I D = 7.75A
V GS = 0V, I D = 1.0mA
V GS = 0V, T J = 125°C
V DD =250V, I D =12A,
V GS = 0V, V DS = 25V
Test Conditions
V DS =400V, V GS =0V
V DD
V GS =10V, ID = 12A
V DS = 400V
V DS = 250V
V GS = -20V
f = 1.0MHz
V GS = 20V
R G =2.35
50V
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100A/ s