IRF450 International Rectifier, IRF450 Datasheet - Page 4

• Manufacturer Part Number: IRF450
• Description: MOSFET N-CH 500V 12A TO-3-3
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF450

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 500 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 120nC @ 10V
• Input Capacitance (ciss) @ Vds: 2700pF @ 25V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: TO-204, TO-3
• Current, Drain: 12 A
• Gate Charge, Total: 55 nC
• Package Type: TO-3
• Polarization: N-Channel
• Power Dissipation: 150 W
• Resistance, Drain To Source On: 0.4 Ohm
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 170 ns
• Time, Turn-on Delay: 35 ns
• Transconductance, Forward: 5.5 S
• Voltage, Breakdown, Drain To Source: 500 V
• Voltage, Forward, Diode: 1.7 V
• Voltage, Gate To Source: ±20 V
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: *IRF450; Q2009037

IRF450
13 a& b
13 a& b
Fig 6. Typical Gate Charge Vs.
Fig 5. Typical Capacitance Vs.
Gate-to-Source Voltage
Drain-to-Source Voltage
Fig 8. Maximum Safe Operating Area
Fig 7. Typical Source-Drain Diode
Forward Voltage
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