TPCS8104(TE12L,Q) Toshiba, TPCS8104(TE12L,Q) Datasheet - Page 3

• Manufacturer Part Number: TPCS8104(TE12L,Q)
• Description: MOSFET P-CH 30V 11A 2-3R1B
• Manufacturer: Toshiba

Specifications of TPCS8104(TE12L,Q)

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 mOhm @ 5.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 107nC @ 10V
• Input Capacitance (ciss) @ Vds: 5710pF @ 10V
• Power - Max: 600mW
• Mounting Type: Surface Mount
• Package / Case: 2-3R1B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Electrical Characteristics
Source-Drain Ratings and Characteristics
Gate leakage current
Drain cut-OFF current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge 1
Gate-drain (“miller”) charge
Drain reverse current
Forward voltage (diode)
Characteristics
Characteristics
Rise time
Turn-ON time
Fall time
Turn-OFF time
Pulse
(Note 1)
(Ta = 25°C)
V
V
R
Symbol
Symbol
(BR) DSS
(BR) DSX
DS (ON)
V
Q
I
I
C
I
C
|Y
C
Q
GSS
DSS
DRP
V
t
t
Q
DSF
oss
on
off
gs1
t
t
iss
rss
gd
th
fs
r
f
g
|
V
V
I
I
V
V
V
V
V
Duty < = 1%, t
V
I
I
D
D
D
DR
V
GS
DS
DS
GS
GS
DS
DS
DD
= −10 mA, V
= −10 mA, V
GS
= −11 A
3
= −11 A, V
(Ta = 25°C)
= ±16 V, V
= −30 V, V
= −10 V, I
= −4 V, I
= −10 V, I
= −10 V, I
= −10 V, V
∼ − −24 V, V
−10 V
0 V
Test Condition
Test Condition
w
D
= 10 μs
D
D
D
GS
GS
GS
DS
GS
= −5.5 A
GS
GS
= −1 mA
= −5.5 A
= −5.5 A
⎯
= 0 V
= 0 V
= 20 V
= 0 V
= 0 V
= 0 V, f = 1 MHz
= 10 V,
I
D
V
DD
= −5.5 A
∼ − −15 V
V
OUT
−0.8
Min
−30
−15
Min
11
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
5710
Typ.
Typ.
560
590
109
396
107
8.1
12
23
18
23
12
20
⎯
⎯
⎯
⎯
⎯
⎯
⎯
TPCS8104
2009-09-29
−2.0
Max
Max
±10
−10
−44
1.2
18
12
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
Unit
mΩ
nC
μA
μA
pF
ns
V
V
S
A
V