TPCS8104(TE12L,Q) Toshiba, TPCS8104(TE12L,Q) Datasheet - Page 5

• Manufacturer Part Number: TPCS8104(TE12L,Q)
• Description: MOSFET P-CH 30V 11A 2-3R1B
• Manufacturer: Toshiba

Specifications of TPCS8104(TE12L,Q)

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 12 mOhm @ 5.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 11A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 107nC @ 10V
• Input Capacitance (ciss) @ Vds: 5710pF @ 10V
• Power - Max: 600mW
• Mounting Type: Surface Mount
• Package / Case: 2-3R1B
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

50000
30000
10000
5000
3000
1000
500
300
100
2.0
1.6
1.2
0.8
0.4
25
20
15
10
−0.1
5
0
−80
0
0
Common source
V GS = 0 V
f = 1 MHz
Ta = 25°C
Common source
Pulse test
(1)
(2)
V GS = −4.5 V
25
−0.3
−40
Drain-source voltage V
Ambient temperature Ta (°C)
Ambient temperature Ta (°C)
50
−10
Capacitance – V
−1
0
R
DS (ON)
75
P
D
I D = −11 A, −5.5 A, −2.5 A
−3
(1) Device mounted on a
(2) Device mounted on a
t = 10 s
40
– Ta
I D = −11 A, −5.5 A, −2.5 A
100
glass-epoxy board (a)
(Note 2a)
glass-epoxy board (b)
(Note 2b)
– Ta
−10
80
DS
DS
125
(V)
−30
120
150
C oss
C iss
C rss
−100
160
175
5
−100
−0.1
−2.5
−1.5
−0.5
−10
−30
−25
−20
−15
−10
−1
−2
−1
−5
−80
0
0
0
0
V DD = −24 V
Dynamic Input/Output Characteristics
V DS
20
−40
−12
−6
0.2
Drain-source voltage V
Ambient temperature Ta (°C)
Total gate charge Q
−10
40
0
0.4
I
−3
DR
−1
60
V
−12
V GS
th
−5
– V
40
– Ta
−6
DS
80
0.6
V DD = −24 V
g
80
Common source
I D = −11 A
Ta = 25°C
Pulse test
DS
Common source
V DS = −10 V
I D = −1 mA
Pulse test
100
(nC)
Common source
Ta = 25°C
Pulse test
V GS = 0 V
(V)
0.8
120
120
TPCS8104
2009-09-29
160
140
1
−12
−10
−8
−6
−4
−2
0