SPW20N60C2 Infineon Technologies, SPW20N60C2 Datasheet - Page 2

• Manufacturer Part Number: SPW20N60C2
• Description: MOSFET N-CH 600V 20A TO-247
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPW20N60C2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 190 mOhm @ 13A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 5.5V @ 1mA
• Gate Charge (qg) @ Vgs: 103nC @ 10V
• Input Capacitance (ciss) @ Vds: 3000pF @ 25V
• Power - Max: 208W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Lead Free Status / RoHS Status: Request inventory verification / Request inventory verification
• Other names: SPW20N60C2IN

Thermal Characteristics
Parameter
Characteristics
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
Linear derating factor
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s
Electrical Characteristics, at T
Static Characteristics
Drain-source breakdown voltage
V
Drain-source avalanche breakdown voltage
V
Gate threshold voltage, V
I
Zero gate voltage drain current
V
V
Gate-source leakage current
V
Drain-source on-state resistance
V
Gate input resistance
f = 1 MHz, open drain
1 Repetitve avalanche causes additional power losses that can be calculated as P
D
GS
GS
DS
DS
GS
GS
=1mA
=0V, I
=0V, I
=20V, V
=10V, I
= 600 V, V
= 600 V, V
D
D
D
=0.25mA
=20A
DS
=13A, T
=0V
GS
GS
= 0 V, T
= 0 V, T
j
=25°C
j
j
= 25 °C
= 150 °C
GS
= V
j
DS
= 25 °C, unless otherwise specified
Final data
Page 2
Symbol
R
R
T
V
V
V
I
I
R
R
DSS
GSS
sold
thJC
thJA
(BR)DSS
(BR)DS
GS(th)
DS(on)
G
min.
600
3.5
-
-
-
-
-
-
-
-
-
-
AV
Values
=E
0.16
0.54
typ.
700
4.5
0.1
AR
-
-
-
-
-
-
-
*f.
SPW20N60C2
max.
1.67
0.19
100
260
100
0.6
5.5
62
2002-08-12
1
-
-
-
Unit
K/W
W/K
°C
V
µA
nA