SPW20N60C2 Infineon Technologies, SPW20N60C2 Datasheet - Page 8

• Manufacturer Part Number: SPW20N60C2
• Description: MOSFET N-CH 600V 20A TO-247
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPW20N60C2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 190 mOhm @ 13A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 5.5V @ 1mA
• Gate Charge (qg) @ Vgs: 103nC @ 10V
• Input Capacitance (ciss) @ Vds: 3000pF @ 25V
• Power - Max: 208W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Lead Free Status / RoHS Status: Request inventory verification / Request inventory verification
• Other names: SPW20N60C2IN

15 Avalanche SOA
I
par.: T
17 Drain-source breakdown voltage
V
AR
(BR)DSS
= f (t
720
680
660
640
620
600
580
560
540
A
V
20
10
5
0
-60
j
10
SPW20N60C2
AR
-3
150 °C
= f (T
)
10
-20
-2
j
T
)
j (START)
10
20
-1
=125°C
10
0
60
10
T
1
j (START)
100
10
2
=25°C
°C
t
T
µs
AR
j
Final data
180
10
Page 8
4
16 Avalanche energy
E
par.: I
18 Avalanche power losses
P
parameter: E
AS
AR
mJ
W
750
600
550
500
450
400
350
300
250
200
150
100
500
300
200
100
= f (T
= f (f )
50
D
0
0
20
10
= 10 A, V
4
j
)
40
AR
=1mJ
60
DD
= 50 V
80
10
100
5
SPW20N60C2
120
2002-08-12
Hz
°C
T
f
j
160
10
6