SPW20N60C2 Infineon Technologies, SPW20N60C2 Datasheet - Page 3

• Manufacturer Part Number: SPW20N60C2
• Description: MOSFET N-CH 600V 20A TO-247
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPW20N60C2

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 190 mOhm @ 13A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 5.5V @ 1mA
• Gate Charge (qg) @ Vgs: 103nC @ 10V
• Input Capacitance (ciss) @ Vds: 3000pF @ 25V
• Power - Max: 208W
• Mounting Type: Through Hole
• Package / Case: TO-247-3 (Straight Leads)
• Lead Free Status / RoHS Status: Request inventory verification / Request inventory verification
• Other names: SPW20N60C2IN

Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
1 C
2 C
Electrical Characteristics , at T
Parameter
Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Effective output capacitance,
energy related
Effective output capacitance,
time related
Turn-on delay time
Rise time
Turn-off delay time
Fall time
o(er)
o(tr)
is a fixed capacitance that gives the same charging time as C
is a fixed capacitance that gives the same stored energy as C
1)
2)
Q
Q
Q
V
Symbol
g
C
C
C
C
C
t
t
t
t
d(on)
r
d(off)
f
j
(plateau)
gs
gd
g
fs
iss
oss
rss
o(er)
o(tr)
= 25 °C, unless otherwise specified
Final data
V
V
V
V
V
I
V
f=1MHz
V
V
V
I
T
Page 3
D
D
DD
DD
GS
DD
j
DS
GS
GS
DS
DD
=125°C
=13A
=20A, R
=350V, I
=350V, I
=0 to 10V
=350V, I
=0V to 480V
=0V, V
=0V,
=380V, V
2*I
Conditions
D
*R
G
DS
=3.6 ,
D
D
D
DS(on)max
=20A
=20A,
=20A
GS
=25V,
=0/13V,
oss
oss
while V
while V
,
DS
min.
DS
-
-
-
-
-
-
-
-
-
-
-
-
-
-
is rising from 0 to 80% V
is rising from 0 to 80% V
Values
3000
1170
160
typ.
21
46
79
12
28
83
21
51
56
8
SPW20N60C2
6
2002-08-12
max.
103
84
-
-
-
9
-
-
-
-
-
-
-
-
nC
V
DSS
Unit
S
pF
pF
ns
DSS
.
.