SPP35N10 Infineon Technologies, SPP35N10 Datasheet
SPP35N10
Specifications of SPP35N10
SPP35N10IN
SPP35N10X
SPP35N10XTIN
SPP35N10XTIN
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SPP35N10 Summary of contents
Page 1
... Operating and storage temperature IEC climatic category; DIN IEC 68-1 Rev. 2.1 Ordering Code Symbol puls E AS dv/dt =175°C jmax tot stg Page 1 SPI35N10 SPP35N10 Product Summary 100 DS(on PG-TO262-3-1 PG-TO220-3-1 Marking 35N10 35N10 Value 35 26.4 140 245 6 ±20 150 -55 ...
Page 2
... Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain connection. PCB is vertical without blown air. Rev. 2.1 Symbol R thJC R thJA R thJA = 25 °C, unless otherwise specified j Symbol V (BR)DSS = GS(th) I DSS I GSS R DS(on) Page 2 SPI35N10 SPP35N10 Values Unit min. typ. max K Values Unit min. typ. max. 100 - - V 2 ...
Page 3
... I =35A d(off =80V, I =35A =80V, I =35A 10V GS V (plateau) V =80V, I =35A =25° =0V, I =35A =50V /dt=100A/µ Page 3 SPI35N10 SPP35N10 Values Unit min. typ. max 1180 1570 pF - 245 326 - 137 206 - 12.2 18 6 140 - 0.95 1. 100 ns - 230 290 nC 2005-02-14 ...
Page 4
... C 3 SPP35N10 Rev. 2.1 2 Drain current parameter: V SPP35N10 °C 190 Transient thermal impedance thJC parameter : SPP35N10 10 K 2.5µ µs 100 µ Page 4 SPI35N10 SPP35N10 ) 100 120 140 160 ) 0.50 single pulse - 2005-02-14 °C 190 T C 0.20 0.10 0.05 0.02 0. ...
Page 5
... Typ. output characteristic =25° parameter µ Typ. transfer characteristics parameter µ Rev. 2.1 6 Typ. drain-source on resistance R DS(on) parameter: V 500 [V 300 200 b 100 Typ. forward transconductance DS(on)max fs parameter Page =25° 2005-02-14 SPI35N10 SPP35N10 V [V 100 ...
Page 6
... Typ. gate threshold voltage V GS(th parameter 140 °C 100 200 Forward character. of reverse diode parameter iss C oss C rss Page 2 =83µA D 1.5 -65 - µ SPP35N10 °C typ 175 °C typ °C (98 175 °C (98 0.4 0.8 1.2 1.6 2 SPI35N10 SPP35N10 I =1mA D 115 °C 175 2005-02-14 ...
Page 7
... Drain-source breakdown voltage (BR)DSS j SPP35N10 120 V 114 112 110 108 106 104 102 100 -60 - Rev. 2.1 12 Typ. gate charge parameter 125 145 °C 185 T j 100 140 °C 200 T j Page 7 ) Gate = 35 A pulsed D SPP35N10 max SPI35N10 SPP35N10 0 max Gate 2005-02-14 ...
Page 8
... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.1 Page 8 SPI35N10 SPP35N10 2005-02-14 ...