SPP35N10 Infineon Technologies, SPP35N10 Datasheet - Page 3

• Manufacturer Part Number: SPP35N10
• Description: MOSFET N-CH 100V 35A TO-220AB
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of SPP35N10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 44 mOhm @ 26.4A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 35A
• Vgs(th) (max) @ Id: 4V @ 83µA
• Gate Charge (qg) @ Vgs: 65nC @ 10V
• Input Capacitance (ciss) @ Vds: 1570pF @ 25V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: TO-220AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000013851; SPP35N10IN; SPP35N10X; SPP35N10XTIN; SPP35N10XTIN

Electrical Characteristics, at T
Parameter
Dynamic Characteristics
Transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Reverse Diode
Inverse diode continuous
forward current
Inverse diode direct current,
pulsed
Inverse diode forward voltage V
Reverse recovery time
Reverse recovery charge
Rev. 2.1
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
V
I
I
t
Q
j
d(on)
r
d(off)
f
S
SM
rr
fs
= 25 °C, unless otherwise specified
iss
oss
rss
(plateau) V
SD
gs
gd
g
rr
V
, I
V
f=1MHz
V
I
V
V
V
T
V
V
di
D
Page 3
DS
GS
DD
DD
DD
GS
DD
C
GS
R
F
D
=35A, R
=25°C
=50V, I
/dt=100A/µs
=26.4A


=0V, V
=50V, V
=80V, I
=80V, I
=0 to 10V
=80V, I
=0V, I
Conditions
2 *I
D
*R
F =
G
F
DS
D
D
D
=35A
=7
DS(on)max
GS
l
S
=35A
=35A,
=35A
=25V,
,

=10V,
min.
12
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Values
1180
12.2
0.95
typ.
245
137
230
6.5
6.1
23
63
39
23
27
49
80
-
-
2005-02-14
max.
1570 pF
18.3 ns
1.25 V
SPP35N10
326
206
140
100
290
8.6
95
59
34
41
65
35
SPI35N10
-
-
Unit
S
nC
V
A
ns
nC