SPP35N10 Infineon Technologies, SPP35N10 Datasheet - Page 6

• Manufacturer Part Number: SPP35N10
• Description: MOSFET N-CH 100V 35A TO-220AB
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of SPP35N10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 44 mOhm @ 26.4A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 35A
• Vgs(th) (max) @ Id: 4V @ 83µA
• Gate Charge (qg) @ Vgs: 65nC @ 10V
• Input Capacitance (ciss) @ Vds: 1570pF @ 25V
• Power - Max: 150W
• Mounting Type: Through Hole
• Package / Case: TO-220AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000013851; SPP35N10IN; SPP35N10X; SPP35N10XTIN; SPP35N10XTIN

9 Drain-source on-state resistance
R
parameter : I
11 Typ. capacitances
C = f ( V
parameter: V
DS(on)
Rev. 2.1
m
pF
10
10
10
10
190
160
140
120
100


80
60
40
20
0
-60
4
3
2
1
0
SPP35N10
DS
= f ( T
)
-20
5
D
GS
j
)
= 26.4 A, V
=0V, f =1 MHz
10
20
98%
15
60
typ
GS
20
100
= 10 V
25
140 °C
V
C oss
C iss
C rss
T
V
j
DS
200
35
Page 6
10 Typ. gate threshold voltage
V
parameter: V
12 Forward character. of reverse diode
I
parameter: T j , t
F
GS(th)
= f (V
10
10
10
10
V
2.5
1.5
A
4
3
2
-65
3
2
1
0
0
= f ( T j )
SD
SPP35N10
-35
)
0.4
GS
-5
0.8
p
= V
= 80 µs
25
DS
1.2
T
T
T
T
j
j
j
j
= 25 °C typ
= 175 °C typ
= 25 °C (98%)
= 175 °C (98%)
55
1.6
I
85
D
=83µA
2
2005-02-14
115
I
SPP35N10
D
2.4
SPI35N10
=1mA
°C
T
V
V
j
SD
175
3