SPD06N80C3 Infineon Technologies, SPD06N80C3 Datasheet - Page 2

• Manufacturer Part Number: SPD06N80C3
• Description: MOSFET N-CH 800V 6A DPAK
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPD06N80C3

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 900 mOhm @ 3.8A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 3.9V @ 250µA
• Gate Charge (qg) @ Vgs: 41nC @ 10V
• Input Capacitance (ciss) @ Vds: 785pF @ 100V
• Power - Max: 83W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.9 Ohm @ 10 V
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6 A
• Power Dissipation: 83000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 6A
• Drain Source Voltage Vds: 800V
• On Resistance Rds(on): 900mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Fall Time: 8 ns
• Rise Time: 15 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SO000318350; SP000077606; SPD06N80C3INTR; SPD06N80C3T; SPD06N80C3XT; SPD06N80C3XTINTR; SPD06N80C3XTINTR

Rev. 2.3
Maximum Ratings
Parameter
Drain Source voltage slope
V
Thermal Characteristics
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
SMD version, device on PCB:
@ min. footprint
@ 6 cm
Soldering temperature, reflow soldering, MSL3
1.6 mm (0.063 in.) from case for 10s
Electrical Characteristics
Parameter
Drain-source breakdown voltage V
Drain-Source avalanche
breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance R
Gate input resistance
DS
= 640 V, I
2
cooling area
D
= 6 A, T
j
= 125 °C
2)
V
V
I
I
R
Symbol
DSS
GSS
(BR)DSS V
(BR)DS
GS(th)
DS(on)
G
3)
Page 2
V
I
V
T
T
V
V
T
T
f=1MHz, open Drain
D
j
j
j
j
GS
GS
DS
GS
GS
=25°C,
=150°C
=25°C
=150°C
=250
Conditions
=800V, V
=0V, I
=0V, I
=20V, V
=10V, I
, V
Symbol
dv/dt
Symbol
R
R
R
T
D
D
sold
=0.25mA
=6A
thJC
thJA
thJA
D
DS
GS
GS
=3.8A,
=0V
=V
=0V,
DS
min.
min.
800
2.1
-
-
-
-
-
-
-
-
-
-
-
-
Values
Values
Value
0.78
typ.
typ.
870
0.5
2.1
0.7
50
3
-
-
-
-
-
-
-
-
SPD06N80C3
2005-10-05
max.
max.
100
260
100
1.5
3.9
0.9
10
62
75
50
-
-
-
-
Unit
V/ns
Unit
K/W
°C
Unit
V
µA
nA