SPD06N80C3 Infineon Technologies, SPD06N80C3 Datasheet - Page 4

• Manufacturer Part Number: SPD06N80C3
• Description: MOSFET N-CH 800V 6A DPAK
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPD06N80C3

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 900 mOhm @ 3.8A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 3.9V @ 250µA
• Gate Charge (qg) @ Vgs: 41nC @ 10V
• Input Capacitance (ciss) @ Vds: 785pF @ 100V
• Power - Max: 83W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.9 Ohm @ 10 V
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6 A
• Power Dissipation: 83000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 6A
• Drain Source Voltage Vds: 800V
• On Resistance Rds(on): 900mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Fall Time: 8 ns
• Rise Time: 15 ns
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SO000318350; SP000077606; SPD06N80C3INTR; SPD06N80C3T; SPD06N80C3XT; SPD06N80C3XTINTR; SPD06N80C3XTINTR

Electrical Characteristics, at T
Parameter
Inverse diode continuous
forward current
Inverse diode direct current,
pulsed
Inverse diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
Peak rate of fall of reverse
recovery current
Typical Transient Thermal Characteristics
Symbol
Thermal resistance
R
R
R
R
R
R
Rev. 2.3
th1
th2
th3
th4
th5
th6
P
tot
(t)
Value
0.024
0.024
0.086
0.309
0.317
0.112
typ.
T
j
C
th1
R
th1
j
= 25 °C, unless otherwise specified
Symbol
I
I
V
t
Q
I
di
S
SM
rr
rrm
SD
rr
C
rr
/dt
th2
Unit
K/W
Page 4
T
V
V
di
C
GS
R
F
C
=25°C
=400V, I
/dt=100A/µs
R
Symbol
Thermal capacitance
C
C
C
C
C
C
th,n
Conditions
=0V, I
th,n
th1
th2
th3
th4
th5
th6
F
F
T
T
=I
=I
case
am b
S
S
,
E xternal H eatsink
min.
0.0001172
0.0006303
0.000447
0.001828
0.004786
-
-
-
-
-
-
-
Value
0.046
typ.
Values
typ.
520
400
18
1
5
-
-
SPD06N80C3
2005-10-05
max.
1.2
18
6
-
-
-
-
Unit
Ws/K
Unit
A
V
ns
µC
A
A/µs