BSP372 E6327 Infineon Technologies, BSP372 E6327 Datasheet

BSP372 E6327

Manufacturer Part Number

BSP372 E6327

Description

MOSFET N-CH 100V 1.7A SOT-223

Manufacturer

Infineon Technologies

Series

SIPMOS®r

Datasheet

1.BSP372_L6327.pdf (9 pages)

Specifications of BSP372 E6327

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

310 mOhm @ 1.7A, 5V

Drain To Source Voltage (vdss)

100V

Current - Continuous Drain (id) @ 25° C

1.7A

Vgs(th) (max) @ Id

2V @ 1mA

Input Capacitance (ciss) @ Vds

520pF @ 25V

Power - Max

1.8W

Mounting Type

Surface Mount

Package / Case

SOT-223 (3 leads + Tab), SC-73, TO-261

Lead Free Status / RoHS Status

Contains lead / RoHS non-compliant

Gate Charge (qg) @ Vgs

Other names

BSP372E6327T
SP000011120

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•

• Qualified according to AEC Q101

SIPMOS

• N channel

• Enhancement mode

• Logic Level

• Avalanche rated

• V

BSP372

Type

BSP372

Maximum Ratings

Parameter

Continuous drain current

DC drain current, pulsed

Avalanche energy, single pulse

L = 23.3 mH, T

Gate source voltage

Gate-source peak voltage,aperiodic

Power dissipation

Rev 2.0

Pb-free lead plating; RoHS compliant

GS(th)

= 1.7 A, V

= 28 ˚C

= 25 ˚C

= 0.8 ...2.0 V

Small-Signal Transistor

= 25 V, R

= 25 ˚C

100 V

Package

PG-SOT223

= 25

1.7 A

Ω

0.31

Tape and Reel Information

L6327: 1000 pcs/reel

DS(on)

Ω

Symbol

Dpuls

tot

Pin 1

Marking

BSP372

Values

Pin 2

1.7

6.8

1.8

Packaging

Non dry

Pin 3

2008-03-31

BSP372

Unit

Pin 4

Related parts for BSP372 E6327

BSP372 E6327 Summary of contents

Page 1

SIPMOS Small-Signal Transistor • N channel • Enhancement mode • Logic Level • Avalanche rated • 0.8 ...2.0 V GS(th) • Pb-free lead plating; RoHS compliant • Qualified according to AEC Q101 Type ...

Maximum Ratings Parameter Chip or operating temperature Storage temperature Thermal resistance, chip to ambient air Thermal resistance, junction-soldering point IEC climatic category, DIN IEC 68-1 1) Transistor on epoxy pcb 1,5 mm with 6 ...

Page 3

Electrical Characteristics Parameter Dynamic Characteristics Transconductance ≥ 1 DS(on)max, D Input capacitance MHz GS DS ...

Page 4

Electrical Characteristics Parameter Reverse Diode Inverse diode continuous forward current ˚C A Inverse diode direct current,pulsed ˚C A Inverse diode forward voltage 1 ...

Page 5

Power dissipation = ƒ tot A 2.0 W 1.6 P tot 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 Safe operating area I = parameter : D ...

Page 6

Typ. output characteristics = ƒ parameter µ 3 tot 3 2.8 2.4 2.0 1.6 1.2 ...

Page 7

Drain-source on-resistance = ƒ (on) j parameter 1 1.0 Ω 0 (on) 0.7 0.6 0.5 98% 0.4 typ 0.3 0.2 0.1 0.0 -60 -20 ...

Page 8

T Avalanche energy E AS parameter 1 Ω 23 ...

Page 9

Rev 2.0 9 BSP372 2008-03-31 ...

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