BSP372 E6327 Infineon Technologies, BSP372 E6327 Datasheet - Page 6

• Manufacturer Part Number: BSP372 E6327
• Description: MOSFET N-CH 100V 1.7A SOT-223
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSP372 E6327

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 310 mOhm @ 1.7A, 5V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 1.7A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 520pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Gate Charge (qg) @ Vgs: -
• Other names: BSP372E6327T; SP000011120

Typ. output characteristics
I
parameter: t
Typ. transfer characteristics I
parameter: t
V
Rev 2.0
I
D
D
I
DS
D
= ƒ( V
≥ 2 x I
3.8
3.2
2.8
2.4
2.0
1.6
1.2
0.8
0.4
0.0
6.5
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
A
A
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0
DS
0
D
)
P
x R
tot
p
1
p
= 80 µs
= 2W
= 80 µs
i
l
j
k
h
DS(on)max
g
f
e
2
d
3
c
4
5
D
= f ( V
6
7
GS
a
b
)
V GS [V]
8
a
b
c
d
e
f
g
h
i
j
k
l
V
V
DS
GS
V
V
10.0
2.0
2.5
3.0
3.5
4.0
4.5
5.0
6.0
7.0
8.0
9.0
5.0
10
6
Typ. drain-source on-resistance
R
parameter: t
R
Typ. forward transconductance g
parameter: t
V
g
fs
DS (on)
DS
DS (on)
≥
2 x I
1.0
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.0
6.5
5.5
5.0
4.5
4.0
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Ω
S
0.0
0.0
= ƒ( I
D
V
V
GS
GS
2.0
2.5
a
a
x R
p
p
[V] =
[V] =
D
0.2
= 80 µs,
3.0
b
1.0
= 80 µs, T
)
DS(on)max
3.5
c
0.4
4.0
2.0
d
4.5
e
0.6
j
= 25 ˚C
5.0
3.0
f
0.8
6.0
g
a
fs
4.0
7.0
h
1.0
= f ( I
8.0
i
i
BSP372
9.0
D
j
2008-03-31
j
A
I
)
A
D
I
f
h
D
10.0
e
d
k
b
g
c
k
1.4
6.0