BSP372 E6327 Infineon Technologies, BSP372 E6327 Datasheet - Page 2

• Manufacturer Part Number: BSP372 E6327
• Description: MOSFET N-CH 100V 1.7A SOT-223
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSP372 E6327

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 310 mOhm @ 1.7A, 5V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 1.7A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Input Capacitance (ciss) @ Vds: 520pF @ 25V
• Power - Max: 1.8W
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Gate Charge (qg) @ Vgs: -
• Other names: BSP372E6327T; SP000011120

1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm
Electrical Characteristics, at T
Rev 2.0
Maximum Ratings
Parameter
Chip or operating temperature
Storage temperature
Thermal resistance, chip to ambient air
Thermal resistance, junction-soldering point
IEC climatic category, DIN IEC 68-1
Parameter
Static Characteristics
Drain- source breakdown voltage
V
Gate threshold voltage
V
Zero gate voltage drain current
V
V
Gate-source leakage current
V
Drain-Source on-state resistance
V
GS
GS =
DS
DS
GS
GS
= 100 V, V
= 100 V, V
= 0 V, I
= 20 V, V
= 5 V, I
V
DS,
I
D
D
D
= 1 mA
= 0.25 mA, T
= 1.7 A
DS
GS
GS
= 0 V
= 0 V, T
= 0 V, T
j
j
j
= 25 ˚C
= 125 ˚C
= 0 ˚C
j
= 25˚C, unless otherwise specified
1)
1)
2
copper area for drain connection
2
Symbol
V
V
I
I
R
DSS
GSS
(BR)DSS
GS(th)
DS(on)
Symbol
T
T
R
R
j
stg
thJA
thJS
min.
-
-
-
-
100
0.8
Values
typ.
-
1.4
0.1
10
10
0.24
55 / 150 / 56
-55 ... + 150
-55 ... + 150
Values
≤
≤
70
10
max.
-
2
1
100
100
0.31
BSP372
2008-03-31
Unit
˚C
K/W
Unit
V
µA
nA
Ω