IPP12CNE8N G Infineon Technologies, IPP12CNE8N G Datasheet - Page 10

• Manufacturer Part Number: IPP12CNE8N G
• Description: MOSFET N-CH 85V 67A TO-220
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPP12CNE8N G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 12.9 mOhm @ 67A, 10V
• Drain To Source Voltage (vdss): 85V
• Current - Continuous Drain (id) @ 25° C: 67A
• Vgs(th) (max) @ Id: 4V @ 83µA
• Gate Charge (qg) @ Vgs: 64nC @ 10V
• Input Capacitance (ciss) @ Vds: 4340pF @ 40V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0129 Ohms
• Drain-source Breakdown Voltage: 85 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 67 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPP12CNE8NGX; IPP12CNE8NGXK; SP000096467

IPB12CNE8N G
IPD12CNE8N G
IPI12CNE8N G
IPP12CNE8N G
PG-TO-263-3 (D²-Pak)
Rev. 1.05
page 10
2007-08-29