IPP12CNE8N G Infineon Technologies, IPP12CNE8N G Datasheet - Page 7

• Manufacturer Part Number: IPP12CNE8N G
• Description: MOSFET N-CH 85V 67A TO-220
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPP12CNE8N G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 12.9 mOhm @ 67A, 10V
• Drain To Source Voltage (vdss): 85V
• Current - Continuous Drain (id) @ 25° C: 67A
• Vgs(th) (max) @ Id: 4V @ 83µA
• Gate Charge (qg) @ Vgs: 64nC @ 10V
• Input Capacitance (ciss) @ Vds: 4340pF @ 40V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0129 Ohms
• Drain-source Breakdown Voltage: 85 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 67 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPP12CNE8NGX; IPP12CNE8NGXK; SP000096467

Rev. 1.05
13 Avalanche characteristics
I
parameter: T
15 Drain-source breakdown voltage
V
AS
BR(DSS)
=f(t
100
10
100
1
95
90
85
80
75
AV
1
-60
=f(T
); R
j
GS
); I
j(start)
=25
-20
D
=1 mA
10
20
150 °C
t
T
AV
j
60
[μs]
[°C]
100 °C
100
100
25 °C
140
1000
180
page 7
14 Typ. gate charge
V
parameter: V
16 Gate charge waveforms
GS
=f(Q
Q
V
12
10
V
8
6
4
2
0
g(th)
g s(th)
GS
0
gate
); I
DD
Q
D
IPB12CNE8N G
=67 A pulsed
g s
IPI12CNE8N G
10
20
Q
Q
gate
g
Q
sw
[nC]
Q
30
g d
IPD12CNE8N G
IPP12CNE8N G
20 V
40
60 V
Q
40 V
g ate
2007-08-29
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