IPP12CNE8N G Infineon Technologies, IPP12CNE8N G Datasheet - Page 6
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IPP12CNE8N G
Manufacturer Part Number
IPP12CNE8N G
Description
MOSFET N-CH 85V 67A TO-220
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPP12CNE8N_G.pdf
(12 pages)
Specifications of IPP12CNE8N G
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
12.9 mOhm @ 67A, 10V
Drain To Source Voltage (vdss)
85V
Current - Continuous Drain (id) @ 25° C
67A
Vgs(th) (max) @ Id
4V @ 83µA
Gate Charge (qg) @ Vgs
64nC @ 10V
Input Capacitance (ciss) @ Vds
4340pF @ 40V
Power - Max
125W
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0129 Ohms
Drain-source Breakdown Voltage
85 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
67 A
Power Dissipation
125 W
Maximum Operating Temperature
+ 175 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IPP12CNE8NGX
IPP12CNE8NGXK
SP000096467
IPP12CNE8NGXK
SP000096467
Rev. 1.05
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10
10
10
10
10
30
25
20
15
10
=f(T
DS
5
0
5
4
3
2
1
-60
); V
0
j
); I
GS
D
=0 V; f =1 MHz
-20
=67 A; V
20
20
Crss
Coss
Ciss
GS
98 %
V
=10 V
T
DS
j
60
40
[°C]
[V]
typ
100
60
140
180
page 6
80
10 Typ. gate threshold voltage
V
parameter: I
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
3.5
2.5
1.5
0.5
10
10
10
10
=f(T
SD
4
3
2
1
0
3
2
1
0
-60
)
0
j
); V
D
j
-20
GS
IPB12CNE8N G
IPI12CNE8N G
=V
0.5
DS
20
83 μA
175 °C
V
T
SD
j
60
[°C]
1
25 °C, 98%
[V]
830 μA
100
IPD12CNE8N G
IPP12CNE8N G
1.5
25 °C
175 °C, 98%
140
2007-08-29
180
2