IPP12CNE8N G Infineon Technologies, IPP12CNE8N G Datasheet - Page 6

• Manufacturer Part Number: IPP12CNE8N G
• Description: MOSFET N-CH 85V 67A TO-220
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPP12CNE8N G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 12.9 mOhm @ 67A, 10V
• Drain To Source Voltage (vdss): 85V
• Current - Continuous Drain (id) @ 25° C: 67A
• Vgs(th) (max) @ Id: 4V @ 83µA
• Gate Charge (qg) @ Vgs: 64nC @ 10V
• Input Capacitance (ciss) @ Vds: 4340pF @ 40V
• Power - Max: 125W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0129 Ohms
• Drain-source Breakdown Voltage: 85 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 67 A
• Power Dissipation: 125 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPP12CNE8NGX; IPP12CNE8NGXK; SP000096467

Rev. 1.05
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10
10
10
10
10
30
25
20
15
10
=f(T
DS
5
0
5
4
3
2
1
-60
); V
0
j
); I
GS
D
=0 V; f =1 MHz
-20
=67 A; V
20
20
Crss
Coss
Ciss
GS
98 %
V
=10 V
T
DS
j
60
40
[°C]
[V]
typ
100
60
140
180
page 6
80
10 Typ. gate threshold voltage
V
parameter: I
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
3.5
2.5
1.5
0.5
10
10
10
10
=f(T
SD
4
3
2
1
0
3
2
1
0
-60
)
0
j
); V
D
j
-20
GS
IPB12CNE8N G
IPI12CNE8N G
=V
0.5
DS
20
83 μA
175 °C
V
T
SD
j
60
[°C]
1
25 °C, 98%
[V]
830 μA
100
IPD12CNE8N G
IPP12CNE8N G
1.5
25 °C
175 °C, 98%
140
2007-08-29
180
2