IPB04N03LA G Infineon Technologies, IPB04N03LA G Datasheet - Page 4
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IPB04N03LA G
Manufacturer Part Number
IPB04N03LA G
Description
MOSFET N-CH 25V 80A TO-263
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPB04N03LA_G.pdf
(9 pages)
Specifications of IPB04N03LA G
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3.9 mOhm @ 55A, 10V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
2V @ 60µA
Gate Charge (qg) @ Vgs
32nC @ 5V
Input Capacitance (ciss) @ Vds
3877pF @ 15V
Power - Max
107W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IPB04N03LA G
IPB04N03LAGINTR
IPB04N03LAGXT
SP000103302
IPB04N03LAGINTR
IPB04N03LAGXT
SP000103302
Rev. 1.7
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
=f(T
1000
120
100
100
80
60
40
20
10
DS
1
0
0.1
C
0
); T
)
limited by on-state
resistance
C
p
=25 °C; D =0
50
1
DC
T
V
C
DS
100
[°C]
[V]
100 µs
10
10 ms
10 µs
1 ms
150
1 µs
200
100
page 4
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJC
=f(T
0.001
0.01
100
=f(t
0.1
10
80
60
40
20
C
1
0
); V
p
0
0
10
)
0.2
0.05
0.02
0.01
0.5
0.1
-6
GS
≥10 V
10
0
p
/T
-5
single pulse
50
10
0
-4
T
10
t
C
100
p
-3
0
[°C]
[s]
10
-2
IPB04N03LA G
0
150
10
-1
0
10
0
2006-05-10
200
1