IPB04N03LA G Infineon Technologies, IPB04N03LA G Datasheet - Page 4

• Manufacturer Part Number: IPB04N03LA G
• Description: MOSFET N-CH 25V 80A TO-263
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPB04N03LA G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.9 mOhm @ 55A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 2V @ 60µA
• Gate Charge (qg) @ Vgs: 32nC @ 5V
• Input Capacitance (ciss) @ Vds: 3877pF @ 15V
• Power - Max: 107W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPB04N03LA G; IPB04N03LAGINTR; IPB04N03LAGXT; SP000103302

Rev. 1.7
1 Power dissipation
P
3 Safe operating area
I
parameter: t
D
tot
=f(V
=f(T
1000
120
100
100
80
60
40
20
10
DS
1
0
0.1
C
0
); T
)
limited by on-state
resistance
C
p
=25 °C; D =0
50
1
DC
T
V
C
DS
100
[°C]
[V]
100 µs
10
10 ms
10 µs
1 ms
150
1 µs
200
100
page 4
2 Drain current
I
4 Max. transient thermal impedance
Z
parameter: D =t
D
thJC
=f(T
0.001
0.01
100
=f(t
0.1
10
80
60
40
20
C
1
0
); V
p
0
0
10
)
0.2
0.05
0.02
0.01
0.5
0.1
-6
GS
≥10 V
10
0
p
/T
-5
single pulse
50
10
0
-4
T
10
t
C
100
p
-3
0
[°C]
[s]
10
-2
IPB04N03LA G
0
150
10
-1
0
10
0
2006-05-10
200
1