IPB04N03LA G Infineon Technologies, IPB04N03LA G Datasheet - Page 5
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IPB04N03LA G
Manufacturer Part Number
IPB04N03LA G
Description
MOSFET N-CH 25V 80A TO-263
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.IPB04N03LA_G.pdf
(9 pages)
Specifications of IPB04N03LA G
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3.9 mOhm @ 55A, 10V
Drain To Source Voltage (vdss)
25V
Current - Continuous Drain (id) @ 25° C
80A
Vgs(th) (max) @ Id
2V @ 60µA
Gate Charge (qg) @ Vgs
32nC @ 5V
Input Capacitance (ciss) @ Vds
3877pF @ 15V
Power - Max
107W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IPB04N03LA G
IPB04N03LAGINTR
IPB04N03LAGXT
SP000103302
IPB04N03LAGINTR
IPB04N03LAGXT
SP000103302
Rev. 1.7
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
=f(V
=f(V
140
120
100
160
140
120
100
80
60
40
20
80
60
40
20
DS
GS
0
0
); T
0
0
); |V
j
=25 °C
j
GS
DS
10 V
|>2|I
1
4.5 V
D
|R
1
DS(on)max
175 °C
2
V
V
GS
DS
[V]
[V]
3
25 °C
2
4
2.8 V
3.5 V
3.8 V
3.2 V
4.1 V
3 V
page 5
3
5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
120
100
20
15
10
80
60
40
20
D
=f(I
5
0
0
); T
0
0
D
3 V
j
); T
=25 °C
GS
3.2 V
20
j
=25 °C
20
3.5 V
40
60
3.8 V
I
I
D
D
40
[A]
[A]
80
4.1 V
IPB04N03LA G
100
60
120
4.5 V
10 V
2006-05-10
140
80