IPB04N03LA G Infineon Technologies, IPB04N03LA G Datasheet - Page 6

• Manufacturer Part Number: IPB04N03LA G
• Description: MOSFET N-CH 25V 80A TO-263
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPB04N03LA G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.9 mOhm @ 55A, 10V
• Drain To Source Voltage (vdss): 25V
• Current - Continuous Drain (id) @ 25° C: 80A
• Vgs(th) (max) @ Id: 2V @ 60µA
• Gate Charge (qg) @ Vgs: 32nC @ 5V
• Input Capacitance (ciss) @ Vds: 3877pF @ 15V
• Power - Max: 107W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPB04N03LA G; IPB04N03LAGINTR; IPB04N03LAGXT; SP000103302

Rev. 1.7
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10
10
10
DS
=f(T
8
7
6
5
4
3
2
1
0
4
3
2
-60
); V
0
j
); I
GS
D
=0 V; f =1 MHz
-20
=55 A; V
20
10
GS
98 %
V
=10 V
T
Coss
Ciss
DS
j
Crss
60
[°C]
[V]
typ
100
20
140
180
page 6
30
10 Typ. gate threshold voltage
V
parameter: I
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
2.5
1.5
0.5
10
10
10
10
=f(T
SD
2
1
0
3
2
1
0
-60
)
0
j
); V
D
j
GS
-20
=V
0.5
DS
175 °C
20
60 µA
V
T
SD
j
60
[°C]
1
[V]
600 µA
25 °C
100
IPB04N03LA G
1.5
140
25°C 98%
175°C 98%
2006-05-10
180
2