IPD144N06N G Infineon Technologies, IPD144N06N G Datasheet
IPD144N06N G
Specifications of IPD144N06N G
IPD144N06NGINTR
IPD144N06NGXT
SP000203941
Related parts for IPD144N06N G
IPD144N06N G Summary of contents
Page 1
... DS(on),max I D Symbol Conditions =25 ° =100 ° =25 °C D,pulse = = = = /dt di /dt =200 A/µs, T =175 °C j,max =25 °C tot stg =1.1 K/W the chip is able to carry 64 A. thJC page 1 IPD144N06N 14 Value Unit 200 240 mJ 6 kV/µs ±20 V 136 W -55 ... 175 °C 55/175/56 2008-07-22 ...
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... (BR)DSS =80 µA GS(th = DSS T =25 ° = =125 ° = GSS = =50 A DS(on |>2 DS(on)max = (one layer, 70 µm thick) copper area for drain page 2 IPD144N06N G Values Unit min. typ. max 1 0.01 1 µ 100 - 10 100 nA - 11 2008-07-22 ...
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... See figure 16 for gate charge parameter definition Rev.1.22 Symbol Conditions C iss = oss f =1 MHz C rss t d( d(off g( plateau oss =25 ° S,pulse = =25 ° = /dt =100 A/µ page 3 IPD144N06N G Values Unit min. typ. max. - 1400 1900 pF - 400 530 - 100 150 - 5 200 - 0.94 1 2008-07-22 ...
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... V Rev.1.22 2 Drain current I =f 100 150 200 [° Max. transient thermal impedance Z =f(t thJC p parameter µs 10 µs 100 µ [V] DS page 4 IPD144N06N G ≥ 100 150 T [° 0.5 0.2 0.1 0.05 0.02 0.01 single pulse - [s] p 200 0 10 2008-07-22 ...
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... DS j parameter 200 20 V 180 10 V 160 140 120 100 Typ. transfer characteristics I =f |>2 DS(on)max parameter 175 ° Rev.1.22 6 Typ. drain-source on resistance R =f(I DS(on) parameter Typ. forward transconductance g =f ° [V] GS page 5 IPD144N06N =25 ° 5 [A] D =25 ° [ 2008-07-22 ...
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... Typ. gate threshold voltage V =f(T GS(th) parameter typ 100 140 180 -60 [° Forward characteristics of reverse diode I =f parameter Ciss 2 10 Coss 1 10 Crss [V] DS page 6 IPD144N06N 800 µA 80 µA - 100 140 T [° 175 °C 25 °C 175°C 98% 25°C 98% 0.5 1 1.5 V [V] SD 180 2 2008-07-22 ...
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... Avalanche characteristics parameter: T j(start) 100 150 ° Drain-source breakdown voltage V =f BR(DSS -60 - Rev.1.22 14 Typ. gate charge V =f(Q GS parameter °C 100 ° 100 1000 [µ Gate charge waveforms s(th) Q g(th) 60 100 140 180 [°C] j page 7 IPD144N06N =50 A pulsed gate [nC] gate ate 2008-07-22 ...
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... PG-TO252-3: Outline packaging: Rev.1.22 page 8 IPD144N06N G 2008-07-22 ...
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... Rev.1.22 page 9 IPD144N06N G 2008-07-22 ...