IPD144N06N G Infineon Technologies, IPD144N06N G Datasheet - Page 5

• Manufacturer Part Number: IPD144N06N G
• Description: MOSFET N-CH 60V 50A TO-252
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPD144N06N G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 14.4 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 4V @ 80µA
• Gate Charge (qg) @ Vgs: 54nC @ 10V
• Input Capacitance (ciss) @ Vds: 1900pF @ 30V
• Power - Max: 136W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0144 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 135 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPD144N06N G; IPD144N06NGINTR; IPD144N06NGXT; SP000203941

Rev.1.22
5 Typ. output characteristics
I
parameter: V
7 Typ. transfer characteristics
I
parameter: T
D
D
=f(V
=f(V
200
180
160
140
120
100
80
60
40
20
80
60
40
20
DS
GS
0
0
); T
0
0
); |V
j
=25 °C
j
GS
DS
|>2|I
1
2
D
20 V
|R
DS(on)max
2
V
V
10 V
175 °C
DS
GS
4
7 V
[V]
4.5 V
[V]
6 V
6.5 V
5.5 V
5 V
3
25 °C
6
4
page 5
5
8
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
fs
DS(on)
=f(I
50
40
30
20
10
70
60
50
40
30
20
10
D
=f(I
0
0
); T
0
0
D
j
); T
=25 °C
GS
j
=25 °C
10
20
5 V
I
I
D
D
20
40
[A]
[A]
IPD144N06N G
30
60
20 V
6 V
7 V
5.5 V
10 V
6.5 V
2008-07-22
40
80