IPD144N06N G Infineon Technologies, IPD144N06N G Datasheet - Page 6

• Manufacturer Part Number: IPD144N06N G
• Description: MOSFET N-CH 60V 50A TO-252
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPD144N06N G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 14.4 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 4V @ 80µA
• Gate Charge (qg) @ Vgs: 54nC @ 10V
• Input Capacitance (ciss) @ Vds: 1900pF @ 30V
• Power - Max: 136W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.0144 Ohms
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 50 A
• Power Dissipation: 135 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IPD144N06N G; IPD144N06NGINTR; IPD144N06NGXT; SP000203941

Rev.1.22
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10000
1000
100
40
30
20
10
10
DS
=f(T
0
-60
); V
0
j
); I
GS
D
-20
=0 V; f =1 MHz
=50 A; V
5
20
10
GS
98 %
V
=10 V
T
DS
j
60
15
[°C]
Coss
[V]
Ciss
Crss
typ
100
20
140
25
180
page 6
30
10 Typ. gate threshold voltage
V
parameter: I
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
10
10
10
10
10
=f(T
SD
5
4
3
2
1
0
-1
3
2
1
0
-60
)
0
j
); V
D
j
GS
-20
=V
0.5
DS
175 °C
20
80 µA
V
T
SD
j
60
[°C]
1
25 °C
[V]
800 µA
25°C 98%
100
IPD144N06N G
1.5
140
175°C 98%
2008-07-22
180
2