SPD02N80C3 Infineon Technologies, SPD02N80C3 Datasheet - Page 8

• Manufacturer Part Number: SPD02N80C3
• Description: MOSFET N-CH 800V 2A TO-252
• Manufacturer: Infineon Technologies
• Series: CoolMOS™r

Specifications of SPD02N80C3

• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 2.7 Ohm @ 1.2A, 10V
• Drain To Source Voltage (vdss): 800V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 3.9V @ 120µA
• Gate Charge (qg) @ Vgs: 16nC @ 10V
• Input Capacitance (ciss) @ Vds: 290pF @ 100V
• Power - Max: 42W
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 2.7 Ohm @ 10 V
• Drain-source Breakdown Voltage: 800 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 2 A
• Power Dissipation: 42000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 2A
• Drain Source Voltage Vds: 800V
• On Resistance Rds(on): 2.7ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000014822; SP000315409; SPD02N80C3; SPD02N80C3INTR; SPD02N80C3XT

SPD02N80C3
Definition of diode switching characteristics
Rev. 2.9
page 8
2008-10-15