NTB90N02 ON Semiconductor, NTB90N02 Datasheet

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NTB90N02

Manufacturer Part Number
NTB90N02
Description
MOSFET N-CH 24V 90A D2PAK
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTB90N02

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5.8 mOhm @ 90A, 10V
Drain To Source Voltage (vdss)
24V
Current - Continuous Drain (id) @ 25° C
90A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
29nC @ 4.5V
Input Capacitance (ciss) @ Vds
2120pF @ 20V
Power - Max
85W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTB90N02
Manufacturer:
ON
Quantity:
1 501
Part Number:
NTB90N02
Manufacturer:
ON Semiconductor
Quantity:
170
Part Number:
NTB90N02G
Manufacturer:
ON
Quantity:
12 500
Part Number:
NTB90N02T4
Manufacturer:
ON/安森美
Quantity:
20 000
NTB90N02, NTP90N02
Power MOSFET
90 Amps, 24 Volts
N−Channel D
power supplies, converters and power motor controls and bridge
circuits.
Features
Typical Applications
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR4 board using 1 pad size, (Cu Area 1.127 in
2. When surface mounted to an FR4 board using minimum recommended pad
*Chip current capability limited by package.
MAXIMUM RATINGS
March, 2005 − Rev. 2
Drain−to−Source Voltage
Operating and Storage Temperature
Maximum Lead Temperature for Soldering
Purposes, 1/8 from case for 10 seconds
Gate−to−Source Voltage
Drain Current
Total Power Dissipation @ T
Single Pulse Drain−to−Source Avalanche
Thermal Resistance
Designed for low voltage, high speed switching applications in
Pb−Free Packages are Available
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
Semiconductor Components Industries, LLC, 2005
size, (Cu Area 0.412 in
Derate above 25 C
Energy − Starting T
(V
L = 5.0 mH, I
DD
− Continuous
Junction−to−Case
Junction−to−Ambient (Note 1)
− Continuous @ T
− Single Pulse (t
= 28 Vdc, V
L(pk)
Rating
GS
= 17 A, RG = 25 W)
J
2
= 25 C
= 10 Vdc,
p
(T
2
PAK and TO−220
A
= 10 ms)
).
J
= 25 C
= 25 C unless otherwise noted)
A
= 25 C
Symbol
T
V
R
R
J
V
E
I
P
DSS
, T
T
I
DM
qJC
qJA
GS
AS
D
D
L
stg
−55 to +150
Value
"20
0.66
1.55
200
733
260
90*
24
85
70
1
W/ C
Unit
Vdc
Vdc
C/W
mJ
W
A
A
C
C
2
).
1
See detailed ordering and shipping information in the package
dimensions section on page 4 of this data sheet.
NTx90N02
x
A
Y
WW
V
1
(BR)DSS
2
2
24 V
3
3
ORDERING INFORMATION
4
= Device Code
= P or B
= Assembly Location
= Year
= Work Week
http://onsemi.com
G
CASE 221A
4
TO−220AB
7.5 mW @ 4.5 V
5.0 mW @ 10 V
STYLE 5
R
N−Channel
CASE 418B
DS(on)
STYLE 2
D
2
PAK
Publication Order Number:
D
TYP
Gate
Gate
S
DIAGRAMS
MARKING
1
NTx90N02
AYWW
1
NTx90N02
AYWW
Drain
Drain
Drain
4
Drain
NTB90N02/D
2
4
2
I
D
90 A
MAX
3
Source
3
Source

Related parts for NTB90N02

NTB90N02 Summary of contents

Page 1

... NTB90N02, NTP90N02 Power MOSFET 90 Amps, 24 Volts 2 N−Channel D PAK and TO−220 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features Pb−Free Packages are Available Typical Applications Power Supplies Converters Power Motor Controls ...

Page 2

... Gate Charge SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage ( Adc 2.3 Adc Reverse Recovery Time Reverse Recovery Stored Charge 300 ms, Duty Cycle 3. Pulse Test: Pulse Width 4. Switching characteristics are independent of operating junction temperatures. NTB90N02, NTP90N02 ( unless otherwise noted) J Symbol V (BR)DSS = 0 Vdc Vdc Adc) D ...

Page 3

... GATE−TO−SOURCE VOLTAGE (V) GS Figure 3. On−Resistance versus Gate−To−Source Voltage 0.015 0.0125 0.001 0.0075 0.005 0.0025 0 −50 − JUNCTION TEMPERATURE ( C) J Figure 5. On−Resistance Variation with Temperature NTB90N02, NTP90N02 160 150 4 140 130 4 V 120 110 100 3 3 3.4 V ...

Page 4

... Figure 9. Resistive Switching Time Variation versus Gate Resistance ORDERING INFORMATION Device NTP90N02 NTP90N02G NTB90N02 NTB90N02G NTB90N02T4 NTB90N02T4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. NTB90N02, NTP90N02 ...

Page 5

... The simplest calculation uses appropriate values from the capacitance curves in a standard equation for voltage change network. The equations are: t d(on iss GSP )] t d(off iss GSP ) NTB90N02, NTP90N02 POWER MOSFET SWITCHING The capacitance ( voltage corresponding to the off−state condition when calculating t d(on) on− ...

Page 6

... VARIABLE CONFIGURATION ZONE VIEW W−W VIEW W−W 1 10.66 0.42 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. NTB90N02, NTP90N02 PACKAGE DIMENSIONS 2 D PAK CASE 418AA−01 ISSUE ...

Page 7

... NTB90N02, NTP90N02 PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AA NOTES: SEATING 1. DIMENSIONING AND TOLERANCING PER ANSI −T− PLANE Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH DIMENSION Z DEFINES A ZONE WHERE ALL S BODY AND LEAD IRREGULARITIES ARE ALLOWED. DIM STYLE 5: PIN 1. GATE http://onsemi.com ...

Page 8

... P.O. Box 61312, Phoenix, Arizona 85082−1312 USA Phone: 480−829−7710 or 800−344−3860 Toll Free USA/Canada Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com NTB90N02, NTP90N02 N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2− ...

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