NTB90N02 ON Semiconductor, NTB90N02 Datasheet - Page 6

• Manufacturer Part Number: NTB90N02
• Description: MOSFET N-CH 24V 90A D2PAK
• Manufacturer: ON Semiconductor

Specifications of NTB90N02

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.8 mOhm @ 90A, 10V
• Drain To Source Voltage (vdss): 24V
• Current - Continuous Drain (id) @ 25° C: 90A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 29nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2120pF @ 20V
• Power - Max: 85W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

VARIABLE
CONFIGURATION
ZONE
M
VIEW W−W
SEATING
PLANE
−T−
F
1
1
G
−B−
4
2
3
10.66
0.42
*For additional information on our Pb−Free strategy and soldering
D
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
0.13 (0.005)
M
3 PL
S
VIEW W−W
M
F
2
NTB90N02, NTP90N02
T
PACKAGE DIMENSIONS
8.38
0.33
SOLDERING FOOTPRINT*
B
M
http://onsemi.com
CASE 418AA−01
K
ISSUE O
17.02
0.67
D
C
2
PAK
6
A
M
U
E
J
V
W
W
VIEW W−W
3.05
0.12
SCALE 3:1
F
3
1.016
0.04
inches
5.08
0.20
mm
NOTES:
1. DIMENSIONING AND TOLERANCING
2. CONTROLLING DIMENSION: INCH.
PER ANSI Y14.5M, 1982.
STYLE 2:
DIM
G
M
A
B
C
D
E
F
J
K
S
V
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
0.340
0.380
0.160
0.020
0.045
0.310
0.018
0.090
0.280
0.575
0.045
MIN
0.100 BSC
INCHES
0.380
0.405
0.190
0.036
0.055
0.025
0.625
0.055
0.110
MAX
−−−
−−−
14.60
MILLIMETERS
8.64
9.65
4.06
0.51
1.14
7.87
0.46
2.29
1.14
MIN
7.11
2.54 BSC
10.29
15.88
MAX
9.65
4.83
0.92
1.40
0.64
2.79
1.40
−−−
−−−