NTB90N02 ON Semiconductor, NTB90N02 Datasheet - Page 2

• Manufacturer Part Number: NTB90N02
• Description: MOSFET N-CH 24V 90A D2PAK
• Manufacturer: ON Semiconductor

Specifications of NTB90N02

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5.8 mOhm @ 90A, 10V
• Drain To Source Voltage (vdss): 24V
• Current - Continuous Drain (id) @ 25° C: 90A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 29nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2120pF @ 20V
• Power - Max: 85W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

3. Pulse Test: Pulse Width
4. Switching characteristics are independent of operating junction temperatures.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 3)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note 4)
SOURCE−DRAIN DIODE CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 3)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
Gate−Body Leakage Current (V
Gate Threshold Voltage (Note 3)
Threshold Temperature Coefficient (Negative)
Static Drain−to−Source On−Resistance (Note 3)
Forward Transconductance (Note 3) (V
Input Capacitance
Output Capacitance
Transfer Capacitance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
Forward On−Voltage
Reverse Recovery Time
Reverse Recovery Stored Charge
(V
(V
(V
(V
(V
(V
(V
(V
GS
DS
DS
DS
GS
GS
GS
GS
= 0 Vdc, I
= 24 Vdc, V
= 24 Vdc, V
= V
= 10 Vdc, I
= 4.5 Vdc, I
= 10 Vdc, I
= 4.5 Vdc, I
GS
, I
D
D
= 250 mAdc)
D
D
= 250 mAdc)
D
D
GS
GS
= 90 Adc)
= 20 Adc)
= 40 Adc)
= 20 Adc)
= 0 Vdc)
= 0 Vdc, T
300 ms, Duty Cycle
Characteristic
GS
J
(I
= 150 C)
= $ 20 Vdc, V
S
(I
= 2.3 Adc, V
S
DS
= 40 Adc, V
(V
(V
(V
V
V
(I
(I
dI /dt
dI
(T
GS
S
DS
S
V
V
DD
DS
S
= 15 Vdc, I
J
GS
= 2.3 Adc, V
= 2.3 Adc, V
/dt = 100 A/ms) (Note 3)
= 25 C unless otherwise noted)
= 20 Vdc, V
= 4.5 Vdc, R
= 20 Vdc, I
= 20 Vdc, I
= 4.5 Vdc) (Note 3)
4 5 Vdc R
f
f = 1.0 MHz)
4 5 Vdc) (Note 3)
100 A/ms) (Note 3)
2%.
DS
GS
1 0 MHz)
NTB90N02, NTP90N02
GS
= 0 Vdc)
= 0 Vdc, T
D
= 0 Vdc) (Note 3)
= 10 Adc)
GS
GS
D
D
GS
http://onsemi.com
G
= 20 Adc,
= 20 Adc,
= 0 Vdc)
= 0 Vdc,
= 2.5 W)
= 0 Vdc,
2 5 W)
J
= 150 C)
2
V
Symbol
R
V
(BR)DSS
t
t
I
I
C
Q
GS(th)
DS(on)
C
C
V
g
d(on)
d(off)
GSS
DSS
Q
Q
Q
t
t
t
oss
FS
t
t
SD
RR
iss
rss
rr
a
b
r
f
T
1
2
Min
1.0
24
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.036
2120
−3.8
0.75
0.65
Typ
900
360
1.9
5.0
7.5
5.0
7.5
8.0
1.2
27
25
25
16
90
28
60
29
20
40
21
18
−
−
−
Max
1.0
3.0
5.8
9.0
5.8
9.0
1.0
10
100
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
mV/ C
mV/ C
mhos
mAdc
nAdc
Unit
Vdc
Vdc
mW
Vdc
pF
nC
mC
ns
ns