NTY100N10 ON Semiconductor, NTY100N10 Datasheet

MOSFET N-CH 100V 123A TO-264

NTY100N10

Manufacturer Part Number
NTY100N10
Description
MOSFET N-CH 100V 123A TO-264
Manufacturer
ON Semiconductor
Datasheet
1.NTY100N10.pdf (8 pages)

Specifications of NTY100N10

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
10 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
123A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
350nC @ 10V
Input Capacitance (ciss) @ Vds
10110pF @ 25V
Power - Max
313W
Mounting Type
Through Hole
Package / Case
TO-264-3, TO-3BPL
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
NTY100N10
Manufacturer:
TOSHIBA
Quantity:
30 000
Company:
Meier Automation Equipment Co., Limited Meier Automation Equipment Co., Limited
Part Number:
NTY100N10
Manufacturer:
ON/安森美
Quantity:
20 000
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
NTY100N10G
Manufacturer:
OMNLREL
Quantity:
12 500
NTY100N10
Power MOSFET 123 A,
100 V N−Channel
Enhancement−Mode TO264
Package
Features
•
•
•
•
Applications
•
•
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Pulse Test: Pulse Width = 10 ms, Duty−Cycle = 2%.
*For additional information on our Pb−Free strategy and soldering details, please
© Semiconductor Components Industries, LLC, 2006
March, 2006 − Rev. 2
MAXIMUM RATINGS
download the ON Semiconductor Soldering and Mounting Techniques Reference
Manual, SOLDERRM/D.
Drain−Source Voltage
Drain−Gate Voltage (R
Gate−Source Voltage
Drain Current (Note 1)
Total Power Dissipation (Note 1)
Derate above 25°C
Operating and Storage Temperature Range
Single Pulse Drain−to−Source
Thermal Resistance
Maximum Lead Temperature for Soldering
Fast Recovery Diode
Source−to−Drain Diode Recovery Time Comparable to a Discrete
Avalanche Energy Specified
IDSS and R
Pb−Free Package is Available*
PWM Motor Control
Power Supplies
Converters
− Continuous
− Non−Repetitive (t
− Continuous @ T
− Pulsed
Avalanche Energy − Starting T
(V
Purposes, 0.125 in from case for 10 seconds
Peak I
DD
= 80 Vdc, V
L
= 100 Apk, L = 0.1 mH, R
DS(on)
Rating
GS
C
GS
p
Specified at Elevated Temperature
= 25°C
= 10 Vdc,
v 10 ms)
(T
= 1 MW)
C
− Junction to Ambient
= 25°C unless otherwise noted)
Preferred Device
− Junction to Case
J
= 25°C
G
= 25 W)
Symbol
T
V
V
V
R
R
J
V
E
I
P
DGR
GSM
, T
T
DSS
DM
I
qJC
qJA
GS
AS
D
D
L
stg
−55 to
Value
$ 20
$ 40
100
100
123
369
313
150
500
260
2.5
0.4
25
1
Watts
W/°C
°C/W
Unit
mJ
°C
°C
V
V
V
V
A
A
1
Preferred devices are recommended choices for future use
and best overall value.
NTY100N10
NTY100N10G
2
Device
3
9 mW @ V
CASE 340G
STYLE 1
ORDERING INFORMATION
TO−264
A
YY
WW
G
G
http://onsemi.com
123 A, 100 V
(Pb−Free)
Package
TO−264
TO−264
= Assembly Location
= Year
= Work Week
= Pb−Free Package
GS
N−Channel
MARKING DIAGRAM &
D
Publication Order Number:
= 10 V (Typ)
PIN ASSIGNMENT
S
NTY100N10
AYYWWG
G
1
25 Units/Rail
25 Units/Rail
D
2
NTY100N10/D
Shipping
S
3

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NTY100N10 Summary of contents

Page 1

... A, 100 (Typ) GS N−Channel MARKING DIAGRAM & PIN ASSIGNMENT NTY100N10 AYYWWG TO−264 STYLE Assembly Location YY = Year WW = Work Week G = Pb−Free Package ORDERING INFORMATION Package Shipping TO−264 25 Units/Rail TO−264 25 Units/Rail (Pb−Free) Publication Order Number: NTY100N10/D ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−Source Breakdown Voltage ( 250 mA (Positive Temperature Coefficient) Zero Gate Voltage Drain Current ( Vdc 100 Vdc 25° ...

Page 3

9 8 150 100 DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region ...

Page 4

Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (Dt) are determined by how fast the FET input capacitance can be charged by current from the ...

Page 5

100 1000 t d(off 100 ...

Page 6

The Forward Biased Safe Operating Area curves define the maximum simultaneous drain−to−source voltage and drain current that a transistor can handle safely when it is forward biased. Curves are based upon maximum peak junction temperature and a case temperature (T ...

Page 7

D = 0.5 0.2 0.1 0.05 0.1 0.02 0.01 SINGLE PULSE 0.01 1.0E−05 1.0E− Figure 14. Diode Reverse Recovery Waveform SAFE OPERATING AREA P (pk DUTY CYCLE 1.0E−03 1.0E−02 t, ...

Page 8

... Q 3.1 3.5 0.122 0.137 R 2.25 REF 0.089 REF U 6.3 REF 0.248 REF W 2.8 3.2 0.110 0.125 STYLE 1: PIN 1. GATE 2. DRAIN 3. SOURCE ON Semiconductor Website: http://onsemi.com Order Literature: http://www.onsemi.com/litorder For additional information, please contact your local Sales Representative. NTY100N10/D ...

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