NTY100N10 ON Semiconductor, NTY100N10 Datasheet - Page 6

• Manufacturer Part Number: NTY100N10
• Description: MOSFET N-CH 100V 123A TO-264
• Manufacturer: ON Semiconductor

Specifications of NTY100N10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 10 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 123A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 350nC @ 10V
• Input Capacitance (ciss) @ Vds: 10110pF @ 25V
• Power - Max: 313W
• Mounting Type: Through Hole
• Package / Case: TO-264-3, TO-3BPL
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

the maximum simultaneous drain−to−source voltage and
drain current that a transistor can handle safely when it is
forward biased. Curves are based upon maximum peak
junction temperature and a case temperature (T
Peak repetitive pulsed power limits are determined by
using the thermal response data in conjunction with the
procedures discussed in AN569, “Transient Thermal
Resistance−General Data and Its Use.”
traverse any load line provided neither rated peak current
(I
transition time (t
total power averaged over a complete switching cycle must
not exceed (T
in switching circuits with unclamped inductive loads. For
DM
The Forward Biased Safe Operating Area curves define
Switching between the off−state and the on−state may
A Power MOSFET designated E−FET can be safely used
1000
0.01
100
0.1
10
) nor rated voltage (V
1
0.1
R
Figure 11. Maximum Rated Forward Bias Safe
V
Single Pulse
T
DS(on)
C
GS
= 25°C
J(MAX)
= 20 V
V
DS
Limit
r
,t
, DRAIN−TO−SOURCE VOLTAGE (V)
f
) do not exceed 10 ms. In addition the
1
− T
C
)/(R
Operating Area
DSS
qJC
Thermal Limit
10
).
) is exceeded and the
100
SAFE OPERATING AREA
C
10 ms
100 ms
1 ms
10 ms
dc
Package
Limit
) of 25°C.
http://onsemi.com
1000
6
reliable operation, the stored energy from circuit
inductance dissipated in the transistor while in avalanche
must be less than the rated limit and adjusted for operating
conditions differing from those specified. Although
industry practice is to rate in terms of energy, avalanche
energy capability is not a constant. The energy rating
decreases non−linearly with an increase of peak current in
avalanche and peak junction temperature.
drain−to−source avalanche at currents up to rated pulsed
current (I
continuous current (I
custom. The energy rating must be derated for temperature
as shown in the accompanying graph (Figure 12).
Maximum energy at currents below rated continuous I
safely be assumed to equal the values indicated.
500
400
300
200
100
Although many E−FETs can withstand the stress of
0
25
Figure 12. Maximum Avalanche Energy versus
T
DM
J
, STARTING JUNCTION TEMPERATURE (°C)
), the energy rating is specified at rated
50
Starting Junction Temperature
D
), in accordance with industry
75
100
125
I
D
= 100 A
D
can
150