NTY100N10 ON Semiconductor, NTY100N10 Datasheet - Page 7
![MOSFET N-CH 100V 123A TO-264](/photos/5/62/56224/488-to-264_sml.jpg)
NTY100N10
Manufacturer Part Number
NTY100N10
Description
MOSFET N-CH 100V 123A TO-264
Manufacturer
ON Semiconductor
Datasheet
1.NTY100N10.pdf
(8 pages)
Specifications of NTY100N10
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
10 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
123A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
350nC @ 10V
Input Capacitance (ciss) @ Vds
10110pF @ 25V
Power - Max
313W
Mounting Type
Through Hole
Package / Case
TO-264-3, TO-3BPL
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NTY100N10
Manufacturer:
TOSHIBA
Quantity:
30 000
Part Number:
NTY100N10
Manufacturer:
ON/安森美
Quantity:
20 000
Company:
Part Number:
NTY100N10G
Manufacturer:
OMNLREL
Quantity:
12 500
0.01
0.1
1.0E−05
1
SINGLE PULSE
D = 0.5
0.2
0.1
0.01
1.0E−04
0.02
0.05
Figure 14. Diode Reverse Recovery Waveform
I
S
1.0E−03
Figure 13. Thermal Response
SAFE OPERATING AREA
t
p
http://onsemi.com
di/
dt
t
a
t, TIME (s)
1.0E−02
7
t
rr
P
(pk)
t
b
I
S
DUTY CYCLE, D = t
0.25 I
t
1
t
S
2
1.0E−01
1
/t
TIME
2
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
J(pk)
qJC
(t) = r(t) R
− T
C
= P
1.0E+00
qJC
(pk)
1
R
qJC
(t)
1.0E+01