NTY100N10 ON Semiconductor, NTY100N10 Datasheet - Page 2

• Manufacturer Part Number: NTY100N10
• Description: MOSFET N-CH 100V 123A TO-264
• Manufacturer: ON Semiconductor

Specifications of NTY100N10

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 10 mOhm @ 50A, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 123A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 350nC @ 10V
• Input Capacitance (ciss) @ Vds: 10110pF @ 25V
• Power - Max: 313W
• Mounting Type: Through Hole
• Package / Case: TO-264-3, TO-3BPL
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

2. Indicates Pulse Test: Pulse Width v300 ms max, Duty Cycle = 2%.
3. Switching characteristics are independent of operating junction temperature.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 2)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Notes 2, 3)
BODY−DRAIN DIODE RATINGS (Note 2)
Drain−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−Body Leakage Current
Gate Threshold Voltage
Static Drain−Source On−State Resistance
Drain−Source On−Voltage (V
Forward Transconductance (V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Total Gate Charge
Gate−Source Charge
Forward On−Voltage
Reverse Recovery Time
Reverse Recovery Stored Charge
(V
(Positive Temperature Coefficient)
(V
(V
(V
(V
(Negative Temperature Coefficient)
(V
(V
(I
(I
(I
S
S
S
GS
GS
GS
GS
DS
GS
GS
= 100 Adc, V
= 100 Adc, V
= 100 Adc, V
= V
= 0, I
= 0 Vdc, V
= 0 Vdc, V
= $20 Vdc, V
= 10 Vdc, I
= 10 Vdc, I
GS
D
, I
= 250 mA)
D
= 250 mAdc)
DS
DS
GS
GS
GS
D
D
= 50 Adc)
= 50 Adc, 150°C)
= 100 Vdc, T
= 100 Vdc, T
DS
= 0 Vdc)
= 0 Vdc, T
= 0 Vdc, dI
= 0)
GS
DS
Characteristic
= 10 Vdc, I
J
= 6 Vdc, I
S
= 150°C)
/dt = 100 A/ms)
J
J
= 25°C)
= 150°C)
(V
DS
(T
= 25 Vdc, V
(V
(V
D
D
V
J
= 50 Adc)
DD
DS
= 100 Adc)
GS
= 25°C unless otherwise noted)
= 50 Vdc, I
= 80 Vdc, I
= 10 Vdc, R
V
GS
GS
= 10 Vdc)
= 0 Vdc, f = 1 MHz)
http://onsemi.com
D
D
G
= 100 Adc,
= 100 Adc,
= 9.1 W)
2
V
Symbol
R
V
V
(BR)DSS
t
t
I
I
DS(on)
C
Q
GS(th)
DS(on)
C
C
V
g
d(on)
d(off)
GSS
DSS
Q
Q
Q
Q
t
t
t
oss
t
FS
rss
t
SD
RR
iss
rr
a
b
r
f
T
1
2
3
Min
100
2.0
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
−
0.009
0.019
7225
1800
10.6
1.02
0.94
1.08
Typ
144
270
150
340
250
200
100
210
155
3.1
0.8
73
30
40
86
55
−
−
−
−
10110
0.010
0.021
2540
Max
100
100
540
265
595
435
350
4.0
1.0
1.1
10
55
−
−
−
−
−
−
−
−
−
−
−
−
mV/°C
mV/°C
Mhos
mAdc
nAdc
Unit
Vdc
Vdc
Vdc
Vdc
nC
mC
pF
ns
ns
W