BC869T/R NXP Semiconductors, BC869T/R Datasheet - Page 3

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BC869T/R

Manufacturer Part Number
BC869T/R
Description
Trans GP BJT PNP 20V 1A 4-Pin(3+Tab) SOT-89 T/R
Manufacturer
NXP Semiconductors
Type
PNPr
Datasheet

Specifications of BC869T/R

Package
4SOT-89
Supplier Package
SOT-89
Pin Count
4
Minimum Dc Current Gain
50@5mA@10V|85@500mA@1V|60@1A@1V
Maximum Operating Frequency
140(Typ) MHz
Maximum Dc Collector Current
1 A
Maximum Collector Emitter Saturation Voltage
0.5@100mA@1A V
Maximum Collector Base Voltage
32 V
Maximum Collector Emitter Voltage
20 V
Maximum Emitter Base Voltage
5 V
NXP Semiconductors
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Notes
1. Refer to SOT89 standard mounting conditions.
2. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated footprint.
3. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm
4. Device mounted on an FR4 printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm
2004 Nov 08
BC869
BC869-16
BC869-25
V
V
V
I
I
I
P
T
T
T
TYPE NUMBER
C
CM
BM
SYMBOL
stg
j
amb
CBO
CEO
EBO
tot
PNP medium power transistor;
20 V, 1 A
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
ambient temperature
NAME
SC-62
PARAMETER
plastic surface mounted package; collector pad for good heat
transfer; 3 leads
open emitter
open base
open collector
T
amb
notes 1 and 2
notes 1 and 3
notes 1 and 4
≤ 25 °C
3
CONDITIONS
DESCRIPTION
PACKAGE
−65
−65
MIN.
−32
−20
−5
−1
−2
−200
0.5
0.85
1.2
+150
150
+150
MAX.
Product data sheet
VERSION
BC869
SOT89
V
V
V
A
A
mA
W
W
W
°C
°C
°C
UNIT
2
2
.
.

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