BC869T/R NXP Semiconductors, BC869T/R Datasheet - Page 7

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BC869T/R

Manufacturer Part Number
BC869T/R
Description
Trans GP BJT PNP 20V 1A 4-Pin(3+Tab) SOT-89 T/R
Manufacturer
NXP Semiconductors
Type
PNPr
Datasheet

Specifications of BC869T/R

Package
4SOT-89
Supplier Package
SOT-89
Pin Count
4
Minimum Dc Current Gain
50@5mA@10V|85@500mA@1V|60@1A@1V
Maximum Operating Frequency
140(Typ) MHz
Maximum Dc Collector Current
1 A
Maximum Collector Emitter Saturation Voltage
0.5@100mA@1A V
Maximum Collector Base Voltage
32 V
Maximum Collector Emitter Voltage
20 V
Maximum Emitter Base Voltage
5 V
NXP Semiconductors
2004 Nov 08
handbook, halfpage
handbook, halfpage
PNP medium power transistor;
20 V, 1 A
BC869-16.
(1) I
(2) I
(3) I
(4) I
Fig.5
BC869-16.
V
Fig.7
h FE
(A)
I C
CE
10
10
−2.4
−2.0
−1.6
−1.2
−0.8
−0.4
−10
3
2
= −1 V.
B
B
B
B
0
= −18 mA.
= −16.2 mA.
= −14.4 mA.
= −12.6 mA.
−4
0
Collector current as a function of
collector-emitter voltage; typical values.
DC current gain as a function of collector
current; typical values.
−10
−3
−1
(5) I
(6) I
(7) I
(8) I
−10
−2
−2
B
B
B
B
= −10.8 mA.
= −9.0 mA.
= −7.2 mA.
= −5.4 mA.
−10
−1
−3
−1
−4
(9) I
(10) I
I C (A)
(10)
V CE (V)
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
MLE319
B
B
MLE317
= −3.6 mA.
= −1.8 mA.
−10
−5
7
handbook, halfpage
handbook, halfpage
V CEsat
−10
BC869-16.
V
Fig.6
BC869-16.
I
Fig.8
V BE
C
(V)
CE
(V)
−10
−10
−10
/I
−1
B
−10
−1
= −1 V.
= 10.
−1
−1
−2
−3
−10
−4
−4
Base-emitter voltage as a function of
collector current; typical values.
Collector-emitter saturation voltage as a
function of collector current; typical values.
−10
−10
−3
−3
−10
−10
−2
−2
−10
−10
−1
−1
−1
Product data sheet
−1
I C (A)
I C (A)
MLE314
MLE320
BC869
−10
−10

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